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{{title|Stokes-Einstein Relation}}
 
{{title|Stokes-Einstein Relation}}
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'''Stokes-Einstein Relation''' is a relation between the [[diffusion coefficient]] of [[charge carriers]] and [[carrier mobility]].
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== Overview ==
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The general form of the equation is
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:<math>D = \mu k_B T</math>
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Where
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* <math>D</math> is the diffusion constant
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* <math>\mu</math> is the [[carrier mobility]]
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* <math>k_B</math> is [[Boltzmann's constant]]
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* <math>T</math> is the temperature
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For diffusion of carriers the special form is more appropriate.
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:<math>D = \frac{\mu k_B T}{q}</math>
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Where <math>q</math> is the [[elementary charge]].
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Then for semiconductors
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:<math>\frac{D_n}{\mu_n} = \frac{k_B T}{q} = \frac{D_p}{\mu_p}</math>
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== See also ==
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* [[Carrier mobility]]
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* [[Diffusion current]]
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* [[Drift current]]

Latest revision as of 19:17, 23 November 2017

Stokes-Einstein Relation is a relation between the diffusion coefficient of charge carriers and carrier mobility.

Overview[edit]

The general form of the equation is

Equation upper D equals mu k Subscript upper B Baseline upper T

Where

For diffusion of carriers the special form is more appropriate.

Equation upper D equals StartFraction mu k Subscript upper B Baseline upper T Over q EndFraction

Where Equation q is the elementary charge.

Then for semiconductors

Equation StartFraction upper D Subscript n Baseline Over mu Subscript n Baseline EndFraction equals StartFraction k Subscript upper B Baseline upper T Over q EndFraction equals StartFraction upper D Subscript p Baseline Over mu Subscript p Baseline EndFraction

See also[edit]