Semiconductor & Computer Engineering
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Difference between revisions of "hybrid bonding"
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| − | '''Hybrid Bonding Interconnect''' ('''HBI''') or '''Direct Bond Interconnect''' ('''DBI''') is a high-performance high-density [[vertical signaling|vertical]] die-to-die [[interconnect]] technology used to transmit signal and power between multiple stacked dies through the direct attachment of two homogeneous surfaces forming strong covalent bonds. | + | '''Hybrid Bonding Interconnect''' ('''HB''' or '''HBI''') or '''Direct Bond Interconnect''' ('''DBI''') is a high-performance high-density [[vertical signaling|vertical]] die-to-die [[interconnect]] technology used to transmit signal and power between multiple stacked dies through the direct attachment of two homogeneous surfaces forming strong covalent bonds. |
Latest revision as of 21:05, 2 July 2022
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Hybrid Bonding Interconnect (HB or HBI) or Direct Bond Interconnect (DBI) is a high-performance high-density vertical die-to-die interconnect technology used to transmit signal and power between multiple stacked dies through the direct attachment of two homogeneous surfaces forming strong covalent bonds.