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Difference between revisions of "deep trench capacitor"

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=== Memory ===
 
=== Memory ===
DTCs forms the main storage capacitor for one of main families of DRAM-based cells.  
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DTCs form the main storage capacitor for one of the main families of [[DRAM]]-based cells called 'Embedded DRAM' which is fabricated on a standard CMOS process, allowing the mixture of memory and logic on the same integrated circuit (as opposed to generic [[DRAM]] ICs which relies on a special [[process technology|process]] not suitable for general logic).
  
 
=== Logic ===
 
=== Logic ===
 
DTCs are unique in many ways from other capacitors. First, they are formed by etching [[deep trenches]] (DTs) into the substrate. This enables very high capacitance density, especially when they are coupled in parallel. Secondly, because they tend to be very thin and deep, when combined with the logic above, they may be used to form very dense structures such as embedded DRAM, PLL loop filters, decoupling circuitry, and other power applications.
 
DTCs are unique in many ways from other capacitors. First, they are formed by etching [[deep trenches]] (DTs) into the substrate. This enables very high capacitance density, especially when they are coupled in parallel. Secondly, because they tend to be very thin and deep, when combined with the logic above, they may be used to form very dense structures such as embedded DRAM, PLL loop filters, decoupling circuitry, and other power applications.
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== Industry ==
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DTCs are used by a number of semiconductor companies in volume production:
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* IBM uses DTCs for their [[eDRAM]] technology which are used to build very fast and very large [[L2]], [[L3]], and [[L4]] caches.
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* TSMC added DTCs called {{tsmc|iCAPs}} to its [[CoWoS]] packaging technology, significantly increasing the [[capacitance density]] allowing construction of higher quality [[power delivery network]]s (PDN)
  
 
== See also ==
 
== See also ==

Revision as of 19:50, 7 March 2020

IBM 32-nanometer DTCs used for eDRAM.

A deep trench capacitor (DTC) is a three-dimentional vertical capacitors formed by etching a deep trench (DT) into a silicon substrate.

Overview

Deep trench capacitors (DTCs) are vertical semiconductor devices that are used to add capacitance to various integrated circuits.

Memory

DTCs form the main storage capacitor for one of the main families of DRAM-based cells called 'Embedded DRAM' which is fabricated on a standard CMOS process, allowing the mixture of memory and logic on the same integrated circuit (as opposed to generic DRAM ICs which relies on a special process not suitable for general logic).

Logic

DTCs are unique in many ways from other capacitors. First, they are formed by etching deep trenches (DTs) into the substrate. This enables very high capacitance density, especially when they are coupled in parallel. Secondly, because they tend to be very thin and deep, when combined with the logic above, they may be used to form very dense structures such as embedded DRAM, PLL loop filters, decoupling circuitry, and other power applications.

Industry

DTCs are used by a number of semiconductor companies in volume production:

See also