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Difference between revisions of "Template:wafer tech"

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* Silicon
 
* Silicon
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** [[Metallurgical-grade silicon]] (MGS)
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** [[metallurgical-grade silicon|Metallurgical-grade silicon]] (MGS)
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** [[Electronic-grade silicon]] (EGS)
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** [[upgraded metallurgical-grade silicon|Upgraded MGS]] (UMGS)
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** [[electronic-grade silicon|Electronic-grade silicon]] (EGS)
 
* Crystal Growth
 
* Crystal Growth
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** [[Czochralski growth]] (CZ)
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** [[czochralski growth|Czochralski growth]] (CZ)
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**  [[Float-zone growth]] (FZ)
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**  [[float-zone growth|Float-zone growth]] (FZ)
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* Preparation
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** [[ingot cropping|Ingot cropping]]
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** [[ingot squaring|Ingot squaring]]
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** [[rod grinding|Rod grinding]]
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<div class="header">Wafer Processing</div>
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* Slicing
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** [[wire sawing|Wire sawing]]
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** [[internal diameter sawing|Internal diameter sawing]] (IDs)
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* Profile control
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** [[wafer edge profiling|Wafer edge profiling]]
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** [[wafer lapping|Wafer lapping]]
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** [[wafer etching|Wafer etching]]
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** [[wafer polishing|Wafer polishing]]
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* Additional layers
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** [[epitaxial deposition|Epitaxial deposition]]
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*** [[epitaxial wafer|Epitaxial wafer]]
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** [[layer transfer|Layer transfer]] (LT)
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*** [[soi wafer|SOI wafer]]
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* Preparation
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** [[wafer inspection|Wafer inspection]]
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** [[wafer packaging|Wafer packaging]]
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** [[wafer shipping|Wafer shipping]]
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Latest revision as of 11:09, 5 March 2018

Ingot Production
Wafer Processing
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