Semiconductor & Computer Engineering
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'''Carrier Mobility''' ('''μ<sub>n,p</sub>''') is the measure of ease of [[charge carrier]] drift. That is, a measure of how quickly a [[charge carrier]] can move through a material. For example, how quickly an [[electron]] can travel through a [[semiconductor]]. | '''Carrier Mobility''' ('''μ<sub>n,p</sub>''') is the measure of ease of [[charge carrier]] drift. That is, a measure of how quickly a [[charge carrier]] can move through a material. For example, how quickly an [[electron]] can travel through a [[semiconductor]]. | ||
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Note that this is for both electrons (<math>\mu_n</math>) and holes (<math>\mu_p</math>). | Note that this is for both electrons (<math>\mu_n</math>) and holes (<math>\mu_p</math>). | ||
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| + | == Characteristics == | ||
| + | {{expand section}} | ||
| + | It's worth noting that as the [[mean free time|time between collisions]] (<math>\tau_c</math>) increases, then mobility increases. Likewise, the lighter the particle (<math>m</math>), then mobility also increases. | ||
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| + | In the case of a [[semiconductor]] such as silicon, at a fixed temperature (e.g., ambient temperature), the mobility will depend on doping. For the same doping level, <math>\mu_n</math> > <math>\mu_p</math>, therefore holes are "heavier" than electrons. Additionally, for low doping level, <math>\mu</math> will be mostly limited by collisions with lattice (as temperature is increased, <math>\mu</math> will decrease). With medium and high doping levels collisions with ionized impurities will limit mobility. | ||
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| + | {{stub}} | ||
Latest revision as of 13:04, 23 November 2017
Carrier Mobility (μn,p) is the measure of ease of charge carrier drift. That is, a measure of how quickly a charge carrier can move through a material. For example, how quickly an electron can travel through a semiconductor.
Overview[edit]
When an electric field is applied across a material, the electrons gain a net velocity in the direction of the field called the drift velocity, defined as
Where the carrier mobility [cm2/Vs] is defined as
Note that this is for both electrons () and holes ().
Characteristics[edit]
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This section requires expansion; you can help adding the missing info. |
It's worth noting that as the time between collisions () increases, then mobility increases. Likewise, the lighter the particle (), then mobility also increases.
In the case of a semiconductor such as silicon, at a fixed temperature (e.g., ambient temperature), the mobility will depend on doping. For the same doping level, > , therefore holes are "heavier" than electrons. Additionally, for low doping level, will be mostly limited by collisions with lattice (as temperature is increased, will decrease). With medium and high doping levels collisions with ionized impurities will limit mobility.
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This article is still a stub and needs your attention. You can help improve this article by editing this page and adding the missing information. |