From WikiChip
Difference between revisions of "carrier mobility"

(Created page with "{{title|Carrier Mobility (μn,p)}} '''Carrier Mobility''' ('''μ<sub>n,p</sub>''') is the measure of ease of charge carrier drift. That is, a measure of how quickly a ch...")
 
Line 1: Line 1:
−
{{title|Carrier Mobility (μn,p)}}
+
{{title|Carrier Mobility (μn,μp)}}
 
'''Carrier Mobility''' ('''μ<sub>n,p</sub>''') is the measure of ease of [[charge carrier]] drift. That is, a measure of how quickly a [[charge carrier]] can move through a material. For example, how quickly an [[electron]] can travel through a [[semiconductor]].
 
'''Carrier Mobility''' ('''μ<sub>n,p</sub>''') is the measure of ease of [[charge carrier]] drift. That is, a measure of how quickly a [[charge carrier]] can move through a material. For example, how quickly an [[electron]] can travel through a [[semiconductor]].
  

Revision as of 12:26, 23 November 2017

Carrier Mobility (μn,p) is the measure of ease of charge carrier drift. That is, a measure of how quickly a charge carrier can move through a material. For example, how quickly an electron can travel through a semiconductor.

Overview

When an electric field Equation upper E is applied across a material, the electrons gain a net velocity in the direction of the field called the drift velocity, defined as

Equation v Subscript d Baseline equals plus-or-minus StartFraction q tau Subscript c Baseline Over 2 m Subscript n comma p Baseline EndFraction upper E

Where the carrier mobility Equation mu Subscript n comma p [cm2/Vs] is defined as

Equation mu Subscript n comma p Baseline equals StartFraction q tau Subscript c Baseline Over 2 m Subscript n comma p Baseline EndFraction

Note that this is for both electrons ( Equation mu Subscript n ) and holes ( Equation mu Subscript p ).

Retrieved from "https://en.wikichip.org/w/index.php?title=carrier_mobility&oldid=67406"