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Editing nanotube-ram
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NRAM has a 3-5ns read/write access time, making it significantly faster than [[DRAM]] and even a viable [[last level cache]]. It's worth noting that writes are faster than reads. From a power perspective, NRAM consumes around 4-5 fJ/bit, slightly better than DRAM (5-7 fJ/bit). Additionally, since there is no capacitors involved, no refresh is necessary therefore the effective bandwidth over comparable DRAM products is higher. | NRAM has a 3-5ns read/write access time, making it significantly faster than [[DRAM]] and even a viable [[last level cache]]. It's worth noting that writes are faster than reads. From a power perspective, NRAM consumes around 4-5 fJ/bit, slightly better than DRAM (5-7 fJ/bit). Additionally, since there is no capacitors involved, no refresh is necessary therefore the effective bandwidth over comparable DRAM products is higher. | ||
− | For this reason | + | For this reason NRAM offers an attractive forward scaling path beyond what DRAM can deliver. Though it would appear that DRAM should scale similarly to NRAM, in practice there is a minimum size at which DRAM can be designed. Below that size, the [[storage capacitor]] is not capable of storing enough charge. NRAM, on the other hand, keeps its state in terms of resistance levels meaning it's limited only by lithography. It is thought that NRAM can scale down to a [[1 nm process]]. |
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== Bibliography == | == Bibliography == |