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Editing 28 nm lithography process
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| process 1 fab = [[TSMC]] | | process 1 fab = [[TSMC]] | ||
| process 1 name = 28LP, 28HPL, 28HP | | process 1 name = 28LP, 28HPL, 28HP | ||
− | | process 1 date = | + | | process 1 date = 2013 |
| process 1 lith = 193 nm | | process 1 lith = 193 nm | ||
| process 1 immersion = Yes | | process 1 immersion = Yes | ||
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| process 3 fab = [[UMC]] | | process 3 fab = [[UMC]] | ||
| process 3 name = 28HPC, 28HLP, 28HPC+, 28µLP | | process 3 name = 28HPC, 28HLP, 28HPC+, 28µLP | ||
− | | process 3 date = | + | | process 3 date = 2014 |
| process 3 lith = 193 nm | | process 3 lith = 193 nm | ||
| process 3 immersion = Yes | | process 3 immersion = Yes | ||
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| process 3 dram = | | process 3 dram = | ||
| process 3 dram Δ = | | process 3 dram Δ = | ||
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* AMD | * AMD | ||
** {{amd|A8}} | ** {{amd|A8}} | ||
− | ** {{amd|A10 | + | ** {{amd|A10}} |
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* Intel (Fab'ed by [[TSMC]]) | * Intel (Fab'ed by [[TSMC]]) | ||
** {{intel|Atom x3}} | ** {{intel|Atom x3}} | ||
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* Xiaomi | * Xiaomi | ||
** {{xiaomi|Surge}} | ** {{xiaomi|Surge}} | ||
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* ARM Holdings | * ARM Holdings | ||
** {{armh|Cortex-A53|l=arch}} | ** {{armh|Cortex-A53|l=arch}} | ||
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* Phytium | * Phytium | ||
** {{phytium|Xiaomi|l=arch}} | ** {{phytium|Xiaomi|l=arch}} | ||
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{{expand list}} | {{expand list}} | ||
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* Liang, C. W., et al. "A 28nm poly/SiON CMOS technology for low-power SoC applications." VLSI Technology (VLSIT), 2011 Symposium on. IEEE, 2011. | * Liang, C. W., et al. "A 28nm poly/SiON CMOS technology for low-power SoC applications." VLSI Technology (VLSIT), 2011 Symposium on. IEEE, 2011. | ||
* James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014. | * James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014. | ||
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