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Retrieved from "https://en.wikichip.org/wiki/samsung/exynos/9825"
Facts about "Exynos 9825 - Samsung"
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base frequency2,730 MHz (2.73 GHz, 2,730,000 kHz) +, 2,400 MHz (2.4 GHz, 2,400,000 kHz) + and 1,950 MHz (1.95 GHz, 1,950,000 kHz) +
core count8 +
core nameCortex-A75 +, Cortex-A55 + and Cheetah +
core voltage (max)1.13 V (11.3 dV, 113 cV, 1,130 mV) +
core voltage (min)0.915 V (9.15 dV, 91.5 cV, 915 mV) +
designerSamsung + and ARM Holdings +
familyExynos +
first announcedAugust 6, 2019 +
first launched2019 +
full page namesamsung/exynos/9825 +
has 4g supporttrue +
has ecc memory supportfalse +
has locked clock multiplierfalse +
has lte advanced supporttrue +
instance ofmicroprocessor +
integrated gpuMali-G76 +
integrated gpu base frequency754 MHz (0.754 GHz, 754,000 KHz) +
integrated gpu designerARM Holdings +
integrated gpu execution units12 +
is multi-chip packagetrue +
isaARMv8.2 +
isa familyARM +
l1$ size192 KiB (196,608 B, 0.188 MiB) + and 256 KiB (262,144 B, 0.25 MiB) +
l1d$ description8-way set associative + and 16-way set associative +
l1d$ size64 KiB (65,536 B, 0.0625 MiB) + and 128 KiB (131,072 B, 0.125 MiB) +
l1i$ description4-way set associative +
l1i$ size128 KiB (131,072 B, 0.125 MiB) +
l2$ description16-way set associative + and 8-way set associative +
l2$ size1 MiB (1,024 KiB, 1,048,576 B, 9.765625e-4 GiB) + and 0.5 MiB (512 KiB, 524,288 B, 4.882812e-4 GiB) +
l3$ size2 MiB (2,048 KiB, 2,097,152 B, 0.00195 GiB) +
ldate2019 +
manufacturerSamsung +
market segmentMobile +
max cpu count1 +
max junction temperature115 K (-158.15 °C, -252.67 °F, 207 °R) +
max memory12,288 MiB (12,582,912 KiB, 12,884,901,888 B, 12 GiB, 0.0117 TiB) +
max memory bandwidth26.82 GiB/s (27,463.68 MiB/s, 28.798 GB/s, 28,797.756 MB/s, 0.0262 TiB/s, 0.0288 TB/s) +
max memory channels4 +
max operating temperature115 °C +
microarchitectureCortex-A75 +, Cortex-A55 + and M4 +
min junction temperature115 K (-158.15 °C, -252.67 °F, 207 °R) +
min operating temperature40 °C +
model number9825 +
nameExynos 9825 +
process7 nm (0.007 μm, 7.0e-6 mm) +
seriesExynos 9 +
smp max ways1 +
supported memory typeLPDDR4X-3600 +
tdp5 W (5,000 mW, 0.00671 hp, 0.005 kW) +
tdp down5 W (5,000 mW, 0.00671 hp, 0.005 kW) +
tdp down frequency2,730 MHz (2.73 GHz, 2,730,000 kHz) +
tdp up8 W (8,000 mW, 0.0107 hp, 0.008 kW) +
tdp up frequency3,016 MHz (3.016 GHz, 3,016,000 kHz) +
technologyCMOS +
thread count8 +
used bySamsung Galaxy Note 10 + and Samsung Galaxy Note 10+ +
user equipment category downlink20 +
user equipment category uplink20 +
word size64 bit (8 octets, 16 nibbles) +