Editing carrier mobility

{{title|Carrier Mobility (μn,p)}}
'''Carrier Mobility''' ('''μ<sub>n,p</sub>''') is the measure of ease of [[charge carrier]] drift. That is, a measure of how quickly a [[charge carrier]] can move through a material. For example, how quickly an [[electron]] can travel through a [[semiconductor]].

== Overview ==
When an [[electric field]] <math>E</math> is applied across a material, the electrons gain a net velocity in the direction of the field called the [[drift velocity]], defined as

:<math>v_d = \pm \frac{q \tau_c}{2 m_{n,p}} E</math>

Where the carrier mobility <math>\mu_{n,p}</math> [cm<sup>2</sup>/Vs] is defined as

:<math>\mu_{n,p} = \frac{q \tau_c}{2 m_{n,p}}</math>

Note that this is for both electrons (<math>\mu_n</math>) and holes (<math>\mu_p</math>).