From WikiChip
Through-Silicon Via (TSV)
(Redirected from Through-Silicon Via)

v · d · e
Packaging
wc 3d stack.svg
Technologies
Concepts
Single-Row
Dual-Row
Quad-Row
Grid Array
2.5D IC
3D IC

Through-Silicon Via (TSV) is a high-performance vertical interconnect technology used to transmit signals and power between multiple stacked dies through piercings in the individual dies.

Overview[edit]

New text document.svg This section is empty; you can help add the missing info by editing this page.

History[edit]

TSVs were invented by William Shockley in his 1958 patent, U.S. Patent 3,044,909, "Semiconductive wafer and method of making the same." Originally called "deep pits", Shockley described etching deep pits in order to connect two wafers together, allowing for signals from its top side to its down side and vice versa. In 1964, Merlin Smith and Stern Emanuel from IBM further developed this idea. Filed under as U.S. Patent 3,343,256, "Methods of making thru-connections in semiconductor wafers", more formally develops the process of producing through-silicon vias.

See also[edit]

  • TCI, alternative technology to TSVs.