{{title|ThruChip Interface (TCI)}}{{packaging}}

ThruChip Interface splits up the problem of [[vertical signaling|vertical]] [[interconnect]]s into two separate problems: data communication and power distribution. For data communication, TCI uses a [[wireless communication|wireless]] [[near-field]] [[inductive coupling]]. Since the data is separate from the power distribution solution, solving the aspect of power is fairly trivial in one of the many solutions such as [[wire bond]], [[redistribution layer|RDL]], and [[TSV]]. For ThruChip in particular, the recommended power distribution solution is [[highly-doped silicon via]] (HDSV).

Under normal circumstances, chip designers try to avoid forming too much coupling between wires. TCI attempts to leverage this problem to form inductors which can then be used to communicate with a coil [[stacked dies|stacked]] above and below the current die. Communication can extend to a whole stack of dies. TCI relies on highly-advanced [[wafer thinning]] process capable of providing sub-10µm thick [[wafers]]. Because the diameter of the inductor is roughly three times the vertical communication distance, with [[ultra-thin wafers]] the inductors can shrink quietly substantially. It's worth noting that since TCI uses a magnetic field for communication, the coils can then be placed on some top layer (above logic, power rails, etc..) which will permeate through all the layers, including the silicon itself, without affecting the rest of the circuit.

An area of concern with TCI has been the ability to pick up on the transmission. [[Near field]] signals decay very rapidly, inversely proportional to the distance cubed. Meaning they can only reach very short distances. It is possible to cap those signals at the ends of the transmission lines, albeit further research is likely necessary to put the issue to rest. However, it has been noted that the EMI is a fraction of what the clock distribution network emits.