Editing through-silicon via

{{title|Through-Silicon Via (TSV)}}{{packaging}}
'''Through-Silicon Via''' ('''TSV''') is a high-performance [[vertical signaling|vertical]] [[interconnect]] technology used to transmit signals between multiple [[stacked dies]] through piercings in the individual dies. TSV is an alternative technology to [[thruchip interface|TCI]].


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 {{title|Through-Silicon Via (TSV)}}{{packaging}}
-'''Through-Silicon Via''' ('''TSV''') is a high-performance [[vertical signaling|vertical]] [[interconnect]] technology used to transmit signals and power between multiple [[stacked dies]] through piercings in the individual dies.
+'''Through-Silicon Via''' ('''TSV''') is a high-performance [[vertical signaling|vertical]] [[interconnect]] technology used to transmit signals between multiple [[stacked dies]] through piercings in the individual dies. TSV is an alternative technology to [[thruchip interface|TCI]].
-== Overview ==
-{{empty section}}
-== History ==
+{{stub}}
-TSVs were invented by [[William Shockley]] in his 1958 patent, U.S. Patent 3,044,909, "Semiconductive wafer and method of making the same." Originally called "deep pits", Shockley described etching deep pits in order to connect two wafers together, allowing for signals from its top side to its down side and vice versa. In 1964, Merlin Smith and Stern Emanuel from IBM further developed this idea. Filed under as U.S. Patent 3,343,256, "Methods of making thru-connections in semiconductor wafers", more formally develops the process of producing through-silicon vias.
-== See also ==
-* [[thruchip interface|TCI]], alternative technology to TSVs.