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'''Embedded DRAM (eDRAM)''' or '''Embedded Dynamic Random-Access Memory (eDRAM)''' is a fully logic-compatible [[embedded memory]] that is typically integrated onto a logic [[integrated circuit]], either as part of an SoC or as a stand-alone chip that's packaged alongside the main SoC.
 
'''Embedded DRAM (eDRAM)''' or '''Embedded Dynamic Random-Access Memory (eDRAM)''' is a fully logic-compatible [[embedded memory]] that is typically integrated onto a logic [[integrated circuit]], either as part of an SoC or as a stand-alone chip that's packaged alongside the main SoC.
  
== Overview ==
 
Embedded DRAM - or eDRAM - refers to a specific type of [[dynamic random-access memory]] that has been designed to be fully logic-compatible. In other words, it is DRAM that was designed to be integrated along with other standard logic onto a single integrated circuit. eDRAM is different from standard DRAM which requires a specialized process. Instead, it is designed to work with standard CMOS logic and be integrated using a standard logic [[process technology]] as well as be mixed along with standard CMOS logic and other analog transistors.
 
 
=== Characteristics ===
 
Embedded DRAM is considered an attractive type of [[volatile memory|volatile]] [[embedded memory]] and a viable alternative to [[SRAM]]. There are various ways of constructing eDRAM, but typically it can be found implemented using just a [[single transistor and a single capacitor]] (1T1C). For this reason, eDRAM is highly dense, typically on the order of 3-5x the density of a standard high-density SRAM bit-cell on an equivalent [[process node]]. Chip architects typically take advantage of this density and utilize embedded DRAM to create large pools of caches far beyond what would be possible with SRAM.
 
 
=== Industry ===
 
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== Implementations ==
 
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== See also ==
 
* [[embedded memory]]
 
* [[SRAM]]
 
  
 
[[Category:embedded memory]]
 
[[Category:embedded memory]]

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