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Difference between revisions of "Template:planar comp header"

(Created page with "{| class="wikitable" style="float:left; margin:0; margin-right:-1px; font-family: monospace;" |- ! colspan="2" |   |- ! style="text-align: right;" colspan="2" | Proce...")
 
 
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  ! style="text-align: right;" | Voltage
 
  ! style="text-align: right;" | Voltage
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! style="text-align: right;" colspan="2" | Metal Layers
 
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  ! style="text-align: right;" colspan="2" | Gate Pitch (L<sub>g</sub>)
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  ! style="text-align: right;" colspan="2" | Gate Length (L<sub>g</sub>)
 
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  ! style="text-align: right;" colspan="2" | Contacted Gate Pitch (CPP)
 
  ! style="text-align: right;" colspan="2" | Contacted Gate Pitch (CPP)

Latest revision as of 06:29, 6 April 2017

 
Process Name
1st Production
Lithography Lithography
Immersion
Exposure
Wafer Type
Size
Transistor Type
Voltage
Metal Layers
 
Gate Length (Lg)
Contacted Gate Pitch (CPP)
Minimum Metal Pitch (MMP)
SRAM bitcell High-Perf (HP)
High-Density (HD)
Low-Voltage (LV)
DRAM bitcell eDRAM
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