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== Industry ==
 
== Industry ==
In January of 2006 Intel announced that they've been able to fabricate the first fully functional [[SRAM]] chips on a 45 nm process. As a preview Intel showcased 45nm SRAM chip (shown below) packing more than 1 billion transistors. Intel opened 3 45 nm facilities, their initial {{intel|D1D}} facility in Oregon, {{intel|Fab 32}} in Arizona and {{intel|Fab 28}} in Israel. Intel's 45 nm process is the first time high-k + metal gate transistors was used in high-volume manufacturing process.
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In January of 2006 Intel announced that they've been able to fabricate the first fully functional [[SRAM]] chips on a 45 nm process. As a preview Intel showcased 45nm SRAM chip (shown below) packing more than 1 billion transistors. Intel opened 3 45 nm facilities, their initial {{intel|D1D}} facility in Oregon, {{intel|Fab 32}} in Arizona and {{intel|Fab 28}} in Israel.
 
{{scrolling table/top|style=text-align: right; | first=Fab
 
{{scrolling table/top|style=text-align: right; | first=Fab
 
  |Process Name
 
  |Process Name
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! colspan="2" | [[Intel]] !! colspan="2" | [[Fujitsu]] !! colspan="2" | [[TI]] !! colspan="2" | [[Toshiba]] / [[Sony]] / [[NEC]]  !!  colspan="2" | [[Samsung]] !!  colspan="2" | [[IBM]] / [[Toshiba]] / [[Sony]] / [[AMD]]
 
! colspan="2" | [[Intel]] !! colspan="2" | [[Fujitsu]] !! colspan="2" | [[TI]] !! colspan="2" | [[Toshiba]] / [[Sony]] / [[NEC]]  !!  colspan="2" | [[Samsung]] !!  colspan="2" | [[IBM]] / [[Toshiba]] / [[Sony]] / [[AMD]]
 
|- style="text-align: center;"
 
|- style="text-align: center;"
| colspan="2" | P1266 (CPU) / P1266.8 (SoC) / P1269 (SoC) || colspan="2" | CS-300 || colspan="2" | || colspan="2" | || colspan="2" | 11LP || colspan="2" |
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| colspan="2" | P1266 || colspan="2" | CS-300 || colspan="2" | || colspan="2" | || colspan="2" | 11LP || colspan="2" |
 
|- style="text-align: center;"
 
|- style="text-align: center;"
 
| colspan="2" | 2006 || colspan="2" | 2008 || colspan="2" | 2008 || colspan="2" | 2006 || colspan="2" | 2007 || colspan="2" | 2007
 
| colspan="2" | 2006 || colspan="2" | 2008 || colspan="2" | 2008 || colspan="2" | 2006 || colspan="2" | 2007 || colspan="2" | 2007
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| 0.346 µm² || 0.61x || 0.225 µm² || ?x || 0.255 µm² || ?x || 0.248 µm² || ?x || 0.29 µm² || 0.54x || 0.370 µm² || 0.57x
 
| 0.346 µm² || 0.61x || 0.225 µm² || ?x || 0.255 µm² || ?x || 0.248 µm² || ?x || 0.29 µm² || 0.54x || 0.370 µm² || 0.57x
 
|-
 
|-
| 0.3816 µm² || 0.56x || || || || || || || 0.359 µm² || 0.53x || ||
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| 0.382 µm² || 0.56x || || || || || || || 0.359 µm² || 0.53x || ||
 
|-
 
|-
 
| || || || || || || || || 0.11 µm² || 0.58x || 0.067 µm² || 0.53x
 
| || || || || || || || || 0.11 µm² || 0.58x || 0.067 µm² || 0.53x
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** {{amd|Opteron}}
 
** {{amd|Opteron}}
 
** {{amd|Phenom II}}
 
** {{amd|Phenom II}}
* Freescale
 
** {{freescale|QorIQ}}
 
 
* IBM
 
* IBM
 
** {{ibm|Power7}}
 
** {{ibm|Power7}}
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== 45 nm Microarchitectures ==
 
== 45 nm Microarchitectures ==
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* Intel
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** {{intel|microarchitectures/bonnell|Bonnell}}
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** {{intel|microarchitectures/nehalem|Nehalem}}
 +
** {{intel|microarchitectures/penryn|Penryn}}
 
* AMD
 
* AMD
** {{amd|K10|l=arch}}
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** {{amd|microarchitectures/k10|K10}}
* IBM
 
** {{ibm|z196|l=arch}}
 
* Intel
 
** {{intel|Bonnell|l=arch}}
 
** {{intel|Nehalem|l=arch}}
 
** {{intel|Penryn|l=arch}}
 
* VIA Technologies
 
** {{via|Isaiah|l=arch}}
 
  
 
{{expand list}}
 
{{expand list}}
 
== Documents ==
 
* [[:File:samsung foundry - 45, 65, 90 (August, 2007).pdf|Samsung foundry - 45 nm, 65 nm, 90 nm guide (August, 2007)]]
 
* Intel
 
** [[:File:45nmSummaryFoils.pdf|New Intel 45 nm Processors]]
 
** [[:File:Press45nm107 FINAL.pdf|High-k + Metal Gate Transistor Breakthrough on 45 nm Microprocessors]]
 
** [[:File:SandToCircuit FINAL.pdf|From sand to circuits]]
 
 
== References ==
 
* Mistry, Kaizad, et al. "A 45nm logic technology with high-k+ metal gate transistors, strained silicon, 9 Cu interconnect layers, 193nm dry patterning, and 100% Pb-free packaging." Electron Devices Meeting, 2007. IEDM 2007. IEEE International. IEEE, 2007.
 
 
[[category:lithography]]
 

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