Editing 45 nm lithography process

{{Lithography processes}}
The '''45 nanometer (45 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[55 nm lithography process|55 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 45 nm process began in 2007. This technology was superseded by the [[40 nm lithography process|40 nm process]] (HN) / [[32 nm lithography process|32 nm process]] (FN) in 2010.

== Industry ==
{{scrolling table/top|style=text-align: right; | first=Fab
 |Process Name
 |1st Production
 |Type
 |Wafer
 |&nbsp;
 |Contacted Gate Pitch
 |Interconnect Pitch (M1P)
 |SRAM bit cell (HD)
 |SRAM bit cell (LP)
 |DRAM bit cell
}}
{{scrolling table/mid}}
|-
! colspan="2" | [[Intel]] !! colspan="2" | [[Fujitsu]] !! colspan="2" | [[TI]] !! colspan="2" | [[Toshiba]] / [[Sony]] / [[NEC]] !!  colspan="2" | [[IBM]] / [[Toshiba]] / [[Sony]] / [[AMD]]
|- style="text-align: center;"
| colspan="2" | P1266 || colspan="2" | CS-300 || colspan="2" | || colspan="2" | || colspan="2" |
|- style="text-align: center;"
| colspan="2" | 2007 || colspan="2" | 2008 || colspan="2" | 2008 || colspan="2" | 2006 || colspan="2" | 2007
|- style="text-align: center;"
| colspan="8" | Bulk || colspan="2" | PDSOI
|- style="text-align: center;"
| colspan="10" | 300mm
|-
! Value !! [[65 nm]] Δ !! Value !! [[65 nm]] Δ !! Value !! [[65 nm]] Δ !! Value !! [[65 nm]] Δ !! Value !! [[65 nm]] Δ
|-
| 180 nm || 0.82x || 190 nm || ?x || ? nm || ?x || 180 nm || ?x || 190 nm || 0.76x
|-
| 160 nm || 0.76x || ? nm || ?x || ? nm || ?x || ? nm || ?x ||  ? nm || ?x
|-
| 0.346 µm<sup>2</sup> || 0.61x || 0.225 µm<sup>2</sup> || ?x || 0.255 µm<sup>2</sup> || ?x || 0.248 µm<sup>2</sup> || ?x || 0.370 µm<sup>2</sup> || 0.57x
|-
| &nbsp; || || || || || || || || ||
|-
| || || || || || || || || 0.067 µm<sup>2</sup> || 0.53x
{{scrolling table/end}}
=== Design Rules ===
{| class="wikitable collapsible collapsed"
|-
! colspan="4" | Intel 45nm Design Rules
|-
! Layer !! Pitch !! Thick !! Aspect Ratio
|-
| Isolation || 200 nm || 200 nm || -
|-
| Contacted Gate || 180 nm || 60 nm || --
|-
| Metal 1 || 160 nm || 144 nm || 1.8
|-
| Metal 2 || 160 nm || 144 nm || 1.8
|-
| Metal 3 || 160 nm || 144 nm || 1.8
|-
| Metal 4 || 240 nm || 216 nm || 1.8
|-
| Metal 5 || 280 nm || 252 nm || 1.8
|-
| Metal 6 || 360 nm || 324 nm || 1.8
|-
| Metal 7 || 560 nm || 504 nm || 1.7
|-
| Metal 8 || 810 nm || 720 nm || 1.8
|-
| Metal 9 || 30.5 µm || 7 µm || 0.4
|}

== 45 nm Microprocessors==
* AMD
** {{amd|Athlon II}}
** {{amd|Opteron}}
** {{amd|Phenom II}}
* IBM
** {{ibm|Power7}}
* Intel
** {{intel|Atom}}
** {{intel|Celeron}}
** {{intel|Core 2 Duo}}
** {{intel|Core 2 Extreme}}
** {{intel|Core 2 Quad}}
** {{intel|Core 2 Quad Extreme}}
** {{intel|Core 2 Solo}}
** {{intel|Core i3}}
** {{intel|Core i5}}
** {{intel|Core i7}}
** {{intel|Core i7EE}}
** {{intel|Pentium Dual-Core}}
** {{intel|Pentium (2009)|Pentium}}
** {{intel|Xeon}}

{{expand list}}

== 45 nm System on Chips==
{{expand list}}

== 45 nm Microarchitectures ==
* Intel
** {{intel|microarchitectures/bonnell|Bonnell}}
** {{intel|microarchitectures/nehalem|Nehalem}}
** {{intel|microarchitectures/penryn|Penryn}}
* AMD
** {{amd|microarchitectures/k10|K10}}

{{expand list}}