Editing 2 µm lithography process

{{lithography processes}}
The '''2 µm lithography process''' was the semiconductor process technology used by the some semiconductor companies in the mid to late 1980s. By the mid 80s this process was replaced by [[1.5 µm]], [[1.3 µm]], and [[1.2 µm]] processes.

== Industry ==
{{scrolling table/top|style=text-align: right; | first=Fab
 |Process Name
 |1st Production
 |Contacted Gate Pitch
 |Interconnect Pitch (M1P)
 |SRAM bit cell
}}
{{scrolling table/mid}}
|-
! [[Intel]] || [[Intel]] || [[Toshiba]] || [[STMicro]] || [[Motorola]] || [[TI]] || [[AMD]] || [[Hitachi]]
|- style="text-align: center;"
| P414.1 (HMOS-II) || P421.X (HMOS-E) || || BCD-Offline || || || || Hi-CMOS II
|- style="text-align: center;"
| 1980 || 1980 || 1986 || 1992 || || || ||
|-
| ? µm || ? µm || ? µm || ? µm || ? µm || ? µm || ? µm || 2 µm
|-
| ? µm || ? µm || ? µm || ? µm || ? µm || ? µm || ? µm || 3 µm
|-
| ? µm² ||  ? µm² ||  ? µm² ||  ? µm² || ? µm² || ? µm² || ? µm² 
{{scrolling table/end}}

== Microprocessors ==
* Motorola
** {{motorola|68020}}
* MIPS
** {{mips|R2000}}
* DEC
** {{decc|CVAX}}
* TI
** {{ti|SBR9000}}
* AMD
** {{amd|Am29100}}
** {{amd|Am29500}}
{{expand list}}

== References ==
* Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.

[[Category:Lithography]]
@@ Line 3: / Line 3: @@
 == Industry ==
-{{#invoke:process nodes
+{{scrolling table/top|style=text-align: right; | first=Fab
- | compare
+  |Process Name
- | fab 1 name link   = intel
+  |1st Production
- | fab 1 proc name   = CHMOS II
+  |Contacted Gate Pitch
- | fab 1 name        = Intel
+  |Interconnect Pitch (M1P)
- | fab 1 date        = 1979
+  |SRAM bit cell
- | fab 1 wafer.type  = Bulk
- | fab 1 wafer.size  =
- | fab 1 xtor.tech   = CMOS
- | fab 1 xtor.type   = Planar
- | fab 1 xtor.volt   = 5 V
- | fab 1 layers      = 1
- | fab 1 diff from   = [[3 µm]] Δ
- | fab 1 xtor.lg     = 2 µm
- | fab 1 xtor.lgΔ    = 0.80x
- | fab 1 xtor.cpp    = 5.6 µm
- | fab 1 xtor.cppΔ   =
- | fab 1 xtor.mmp    = 8 µm
- | fab 1 xtor.mmpΔ   =
- | fab 1 sram.hp     =
- | fab 1 sram.hpΔ    =
- | fab 1 sram.hd     = 1740 µm²
- | fab 1 sram.hdΔ    =
- | fab 1 sram.lv     =
- | fab 1 sram.lvΔ    =
- | fab 1 dram.edram  =
- | fab 1 dram.edramΔ =
- | fab 2 name link   = intel
- | fab 2 name        = Intel
- | fab 2 proc name   = P414.1 (HMOS-II)
- | fab 2 date        = 1980
- | fab 2 wafer.type  = Bulk
- | fab 2 wafer.size  =
- | fab 2 xtor.tech   =
- | fab 2 xtor.type   = Planar
- | fab 2 xtor.volt   = 5 V
- | fab 2 layers      =
- | fab 2 diff from   =
- | fab 2 xtor.lg     =
- | fab 2 xtor.lgΔ    =
- | fab 2 xtor.cpp    =
- | fab 2 xtor.cppΔ   =
-  | fab 2 xtor.mmp    =
-  | fab 2 xtor.mmpΔ   =
-  | fab 2 sram.hp     =
-  | fab 2 sram.hpΔ    =
- | fab 2 sram.hd     =
- | fab 2 sram.hdΔ    =
- | fab 2 sram.lv     =
- | fab 2 sram.lvΔ    =
- | fab 2 dram.edram  =
- | fab 2 dram.edramΔ =
- | fab 3 name link   = intel
- | fab 3 name        = Intel
- | fab 3 proc name   = P421.X (HMOS-E)
-  | fab 3 date        = 1980
- | fab 3 wafer.type  = Bulk
- | fab 3 wafer.size  =
- | fab 3 xtor.tech   = pMOS
- | fab 3 xtor.type   = Planar
- | fab 3 xtor.volt   = 5 V
- | fab 3 layers      =
- | fab 3 diff from   = @
- | fab 3 xtor.lg     =
- | fab 3 xtor.lgΔ    =
- | fab 3 xtor.cpp    =
- | fab 3 xtor.cppΔ   =
- | fab 3 xtor.mmp    =
- | fab 3 xtor.mmpΔ   =
- | fab 3 sram.hp     =
- | fab 3 sram.hpΔ    =
- | fab 3 sram.hd     =
- | fab 3 sram.hdΔ    =
- | fab 3 sram.lv     =
- | fab 3 sram.lvΔ    =
- | fab 3 dram.edram  =
- | fab 3 dram.edramΔ =
- | fab 4 name link   = amd
- | fab 4 name        = AMD
- | fab 4 proc name   =
- | fab 4 date        =
- | fab 4 wafer.type  = Bulk
- | fab 4 wafer.size  =
- | fab 4 xtor.tech   =
- | fab 4 xtor.type   =
- | fab 4 xtor.volt   =
- | fab 4 layers      =
- | fab 4 diff from   = @
- | fab 4 xtor.lg     =
- | fab 4 xtor.lgΔ    =
- | fab 4 xtor.cpp    =
- | fab 4 xtor.cppΔ   =
- | fab 4 xtor.mmp    =
- | fab 4 xtor.mmpΔ   =
- | fab 4 sram.hp     =
- | fab 4 sram.hpΔ    =
- | fab 4 sram.hd     =
- | fab 4 sram.hdΔ    =
- | fab 4 sram.lv     =
- | fab 4 sram.lvΔ    =
- | fab 4 dram.edram  =
- | fab 4 dram.edramΔ =
- | fab 5 name link   = motorola
- | fab 5 name        = Motorola
- | fab 5 proc name   =
- | fab 5 date        =
- | fab 5 wafer.type  = Bulk
- | fab 5 wafer.size  =
- | fab 5 xtor.tech   =
- | fab 5 xtor.type   =
- | fab 5 xtor.volt   =
- | fab 5 layers      =
- | fab 5 diff from   = @
- | fab 5 xtor.lg     =
- | fab 5 xtor.lgΔ    =
- | fab 5 xtor.cpp    =
- | fab 5 xtor.cppΔ   =
- | fab 5 xtor.mmp    =
- | fab 5 xtor.mmpΔ   =
- | fab 5 sram.hp     =
- | fab 5 sram.hpΔ    =
- | fab 5 sram.hd     =
- | fab 5 sram.hdΔ    =
- | fab 5 sram.lv     =
- | fab 5 sram.lvΔ    =
- | fab 5 dram.edram  =
- | fab 5 dram.edramΔ =
- | fab 6 name link   = stmicroelectronics
- | fab 6 name        = STMicro
- | fab 6 proc name   =
- | fab 6 date        = 1992
- | fab 6 wafer.type  =
- | fab 6 wafer.size  =
- | fab 6 xtor.tech   =
- | fab 6 xtor.type   =
- | fab 6 xtor.volt   =
- | fab 6 layers      =
- | fab 6 diff from   = @
- | fab 6 xtor.lg     =
- | fab 6 xtor.lgΔ    =
- | fab 6 xtor.cpp    =
- | fab 6 xtor.cppΔ   =
- | fab 6 xtor.mmp    =
- | fab 6 xtor.mmpΔ   =
- | fab 6 sram.hp     =
- | fab 6 sram.hpΔ    =
- | fab 6 sram.hd     =
- | fab 6 sram.hdΔ    =
- | fab 6 sram.lv     =
- | fab 6 sram.lvΔ    =
- | fab 6 dram.edram  =
- | fab 6 dram.edramΔ =
- | fab 7 name link   = toshiba
- | fab 7 name        = Toshiba
- | fab 7 proc name   =
- | fab 7 date        =
- | fab 7 wafer.type  = Bulk
- | fab 7 wafer.size  =
- | fab 7 xtor.tech   =
- | fab 7 xtor.type   =
- | fab 7 xtor.volt   =
- | fab 7 layers      =
- | fab 7 diff from   = @
- | fab 7 xtor.lg     =
- | fab 7 xtor.lgΔ    =
- | fab 7 xtor.cpp    =
- | fab 7 xtor.cppΔ   =
- | fab 7 xtor.mmp    =
- | fab 7 xtor.mmpΔ   =
- | fab 7 sram.hp     =
- | fab 7 sram.hpΔ    =
- | fab 7 sram.hd     =
- | fab 7 sram.hdΔ    =
- | fab 7 sram.lv     =
- | fab 7 sram.lvΔ    =
- | fab 7 dram.edram  =
- | fab 7 dram.edramΔ =
- | fab 8 name link   = ti
- | fab 8 name        = TI
- | fab 8 proc name   =
- | fab 8 date        =
- | fab 8 wafer.type  = Bulk
- | fab 8 wafer.size  =
- | fab 8 xtor.tech   =
- | fab 8 xtor.type   =
- | fab 8 xtor.volt   =
- | fab 8 layers      =
- | fab 8 diff from   = @
- | fab 8 xtor.lg     =
- | fab 8 xtor.lgΔ    =
- | fab 8 xtor.cpp    =
- | fab 8 xtor.cppΔ   =
- | fab 8 xtor.mmp    =
- | fab 8 xtor.mmpΔ   =
- | fab 8 sram.hp     =
- | fab 8 sram.hpΔ    =
- | fab 8 sram.hd     =
- | fab 8 sram.hdΔ    =
- | fab 8 sram.lv     =
- | fab 8 sram.lvΔ    =
- | fab 8 dram.edram  =
- | fab 8 dram.edramΔ =
- | fab 9 name link   = hitachi
- | fab 9 name        = Hitachi
- | fab 9 proc name   = Hi-CMOS II
- | fab 9 date        = 1982
- | fab 9 wafer.type  = Bulk
- | fab 9 wafer.size  =
- | fab 9 xtor.tech   =
- | fab 9 xtor.type   =
- | fab 9 xtor.volt   = 5 V
- | fab 9 layers      =
- | fab 9 diff from   = [[3 µm]]
- | fab 9 xtor.lg     = 2 µm
- | fab 9 xtor.lgΔ    = 0.67x
- | fab 9 xtor.cpp    =
- | fab 9 xtor.cppΔ   =
- | fab 9 xtor.mmp    = 3 µm
- | fab 9 xtor.mmpΔ   = 1.00x
- | fab 9 sram.hp     =
- | fab 9 sram.hpΔ    =
- | fab 9 sram.hd     = 303.8 µm²
- | fab 9 sram.hdΔ    = 0.34x
- | fab 9 sram.lv     =
- | fab 9 sram.lvΔ    =
- | fab 9 dram.edram  =
- | fab 9 dram.edramΔ =
- | fab 10 name link   = vlsi technology
- | fab 10 name        = VLSI Technology
- | fab 10 proc name   =
- | fab 10 date        =
- | fab 10 wafer.type  = Bulk
- | fab 10 wafer.size  =
- | fab 10 xtor.tech   =
- | fab 10 xtor.type   =
- | fab 10 xtor.volt   =
- | fab 10 layers      =
- | fab 10 diff from   =
- | fab 10 xtor.lg     =
- | fab 10 xtor.lgΔ    =
- | fab 10 xtor.cpp    =
- | fab 10 xtor.cppΔ   =
- | fab 10 xtor.mmp    =
- | fab 10 xtor.mmpΔ   =
- | fab 10 sram.hp     =
- | fab 10 sram.hpΔ    =
- | fab 10 sram.hd     =
- | fab 10 sram.hdΔ    =
- | fab 10 sram.lv     =
- | fab 10 sram.lvΔ    =
- | fab 10 dram.edram  =
- | fab 10 dram.edramΔ =
- | fab 11 name link   = sanyo
- | fab 11 name        = Sanyo
- | fab 11 proc name   =
- | fab 11 date        =
- | fab 11 wafer.type  = Bulk
- | fab 11 wafer.size  =
- | fab 11 xtor.tech   =
- | fab 11 xtor.type   =
- | fab 11 xtor.volt   =
- | fab 11 layers      =
- | fab 11 diff from   =
- | fab 11 xtor.lg     =
- | fab 11 xtor.lgΔ    =
- | fab 11 xtor.cpp    =
- | fab 11 xtor.cppΔ   =
- | fab 11 xtor.mmp    =
- | fab 11 xtor.mmpΔ   =
- | fab 11 sram.hp     =
- | fab 11 sram.hpΔ    =
- | fab 11 sram.hd     =
- | fab 11 sram.hdΔ    =
- | fab 11 sram.lv     =
- | fab 11 sram.lvΔ    =
- | fab 11 dram.edram  =
- | fab 11 dram.edramΔ =
 }}
+{{scrolling table/mid}}
+|-
+! [[Intel]] || [[Intel]] || [[Toshiba]] || [[STMicro]] || [[Motorola]] || [[TI]] || [[AMD]] || [[Hitachi]]
+|- style="text-align: center;"
+| P414.1 (HMOS-II) || P421.X (HMOS-E) || || BCD-Offline || || || || Hi-CMOS II
+|- style="text-align: center;"
+| 1980 || 1980 || 1986 || 1992 || || || ||
+|-
+| ? µm || ? µm || ? µm || ? µm || ? µm || ? µm || ? µm || 2 µm
+|-
+| ? µm || ? µm || ? µm || ? µm || ? µm || ? µm || ? µm || 3 µm
+|-
+| ? µm² ||  ? µm² ||  ? µm² ||  ? µm² || ? µm² || ? µm² || ? µm²
+{{scrolling table/end}}
 == Microprocessors ==
@@ Line 304: / Line 37: @@
 ** {{amd|Am29100}}
 ** {{amd|Am29500}}
-* Intel
-** [[/Intel/8031AH|8031AH]]
-** [[/Intel/8031AH|8033AH]]
-** [[/Intel/8031AH|8051AH]]
-** [[/Intel/8031AH|8052AH]]
 {{expand list}}
-== Microarchitectures ==
-* ARM
-** {{armh|ARM2|l=arch}}
 == References ==
-* Minato, O., et al. "A Hi-CMOSII 8Kx8 bit static RAM." IEEE Journal of Solid-State Circuits 17.5 (1982): 793-798.
 * Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.
-[[category:lithography]]
+[[Category:Lithography]]