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Editing 14 nm lithography process
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This process became Samsung's and GlobalFoundries first generation of FinFET-based transistors. Samsung uses TiN pMOS / TiAIC nMOS as work function metals. Samsung node has gone through a number of refinements from 14LPE (14 Low-Power Early) to 14LPP (14 Low-Power Performance) and further. | This process became Samsung's and GlobalFoundries first generation of FinFET-based transistors. Samsung uses TiN pMOS / TiAIC nMOS as work function metals. Samsung node has gone through a number of refinements from 14LPE (14 Low-Power Early) to 14LPP (14 Low-Power Performance) and further. | ||
=== 11LPP === | === 11LPP === | ||
− | In late 2017 | + | In late 2017 |
=== GlobalFoundries === | === GlobalFoundries === |