From WikiChip
Difference between revisions of "Template:nodes comp"

Line 87: Line 87:
 
-->{{#if: {{{process 6 fab|}}}| {{!}}{{!}} Value {{!}}{{!}} {{{process 6 delta from|}}} }}
 
-->{{#if: {{{process 6 fab|}}}| {{!}}{{!}} Value {{!}}{{!}} {{{process 6 delta from|}}} }}
 
|-
 
|-
| {{{process 1 gate len|}}} || {{#ifeq: {{{process 1 gate len Δ|}}} | - | | {{{process 1 gate len Δ|}}} }}<!--
+
| {{{process 1 gate len|}}} || {{#ifeq: {{{process 1 gate len Δ|}}} | - | rowspan="7" style="background: #a3a3a3;" {{!}} N/A | {{{process 1 gate len Δ|}}} }}<!--
 
-->{{#if: {{{process 2 fab|}}}| {{!}}{{!}} {{{process 2 gate len|}}} {{#ifeq: {{{process 2 gate len Δ|}}} | - | | {{!}}{{!}} {{{process 2 gate len Δ|}}} }} }}<!--
 
-->{{#if: {{{process 2 fab|}}}| {{!}}{{!}} {{{process 2 gate len|}}} {{#ifeq: {{{process 2 gate len Δ|}}} | - | | {{!}}{{!}} {{{process 2 gate len Δ|}}} }} }}<!--
 
-->{{#if: {{{process 3 fab|}}}| {{!}}{{!}} {{{process 3 gate len|}}} {{#ifeq: {{{process 3 gate len Δ|}}} | - | | {{!}}{{!}} {{{process 3 gate len Δ|}}} }} }}<!--
 
-->{{#if: {{{process 3 fab|}}}| {{!}}{{!}} {{{process 3 gate len|}}} {{#ifeq: {{{process 3 gate len Δ|}}} | - | | {{!}}{{!}} {{{process 3 gate len Δ|}}} }} }}<!--

Revision as of 10:20, 7 April 2017

 
Process Name
1st Production
Litho-
graphy
Lithography
Immersion
Exposure
Wafer Type
Size
Tran-
sistor
Type
Voltage
Metal Layers
 
Gate Length (Lg)
Contacted Gate Pitch (CPP)
Minimum Metal Pitch (MMP)
SRAM
bitcell
High-Perf (HP)
High-Density (HD)
Low-Voltage (LV)
DRAM
bitcell
eDRAM
Value