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Difference between revisions of "Template:10 nm comp header"
Line 29: | Line 29: | ||
! style="text-align: right;" | Height | ! style="text-align: right;" | Height | ||
|- | |- | ||
− | ! style="text-align: right;" colspan="2" | Gate | + | ! style="text-align: right;" colspan="2" | Gate Length (L<sub>g</sub>) |
|- | |- | ||
! style="text-align: right;" colspan="2" | Contacted Gate Pitch (CPP) | ! style="text-align: right;" colspan="2" | Contacted Gate Pitch (CPP) |
Latest revision as of 05:29, 6 April 2017
Process Name | |
---|---|
1st Production | |
Lithography | Lithography |
Immersion | |
Exposure | |
Wafer | Type |
Size | |
Transistor | Type |
Voltage | |
Fin | Pitch |
Width | |
Height | |
Gate Length (Lg) | |
Contacted Gate Pitch (CPP) | |
Minimum Metal Pitch (MMP) | |
SRAM bitcell | High-Perf (HP) |
High-Density (HD) | |
Low-Voltage (LV) | |
DRAM bitcell | eDRAM |