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Difference between revisions of "Template:nodes comp"
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| {{{process 1 gate len|}}} || {{#ifeq: {{{process 1 gate len Δ|}}} | - | rowspan="7" style="background: #a3a3a3;" {{!}} N/A | {{{process 1 gate len Δ|}}} }}<!-- | | {{{process 1 gate len|}}} || {{#ifeq: {{{process 1 gate len Δ|}}} | - | rowspan="7" style="background: #a3a3a3;" {{!}} N/A | {{{process 1 gate len Δ|}}} }}<!-- | ||
-->{{#if: {{{process 2 fab|}}}| {{!}}{{!}} {{{process 2 gate len|}}} {{!}}{{!}} {{#ifeq: {{{process 2 gate len Δ|}}} | - | rowspan="7" style="background: #a3a3a3;" {{!}} N/A | {{{process 2 gate len Δ|}}} }} }}<!-- | -->{{#if: {{{process 2 fab|}}}| {{!}}{{!}} {{{process 2 gate len|}}} {{!}}{{!}} {{#ifeq: {{{process 2 gate len Δ|}}} | - | rowspan="7" style="background: #a3a3a3;" {{!}} N/A | {{{process 2 gate len Δ|}}} }} }}<!-- | ||
− | -->{{#if: {{{process 3 fab|}}}| | + | -->{{#if: {{{process 3 fab|}}}| {{{process 3 gate len|}}} {{!}}{{!}} {{#ifeq: {{{process 3 gate len Δ|}}} | - | rowspan="7" style="background: #a3a3a3;" {{!}} N/A | {{!}}{{!}} {{{process 3 gate len Δ|}}} }} }}<!-- |
− | -->{{#if: {{{process 4 fab|}}}| | + | -->{{#if: {{{process 4 fab|}}}| {{{process 4 gate len|}}} {{!}}{{!}} {{#ifeq: {{{process 4 gate len Δ|}}} | - | rowspan="7" style="background: #a3a3a3;" {{!}} N/A | {{!}}{{!}} {{{process 4 gate len Δ|}}} }} }}<!-- |
− | -->{{#if: {{{process 5 fab|}}}| | + | -->{{#if: {{{process 5 fab|}}}| {{{process 5 gate len|}}} {{!}}{{!}} {{#ifeq: {{{process 5 gate len Δ|}}} | - | rowspan="7" style="background: #a3a3a3;" {{!}} N/A | {{!}}{{!}} {{{process 5 gate len Δ|}}} }} }}<!-- |
− | -->{{#if: {{{process 6 fab|}}}| | + | -->{{#if: {{{process 6 fab|}}}| {{{process 6 gate len|}}} {{!}}{{!}} {{#ifeq: {{{process 6 gate len Δ|}}} | - | rowspan="7" style="background: #a3a3a3;" {{!}} N/A | {{!}}{{!}} {{{process 6 gate len Δ|}}} }} }} |
|- | |- | ||
| {{{process 1 cpp|}}} {{#ifeq: {{{process 1 cpp Δ|}}} | - | | {{!}}{{!}} {{{process 1 cpp Δ|}}} }}<!-- | | {{{process 1 cpp|}}} {{#ifeq: {{{process 1 cpp Δ|}}} | - | | {{!}}{{!}} {{{process 1 cpp Δ|}}} }}<!-- |
Revision as of 20:36, 7 April 2017
Process Name | |
---|---|
1st Production | |
Lithography | Lithography |
Immersion | |
Exposure | |
Wafer | Type |
Size | |
Transistor | Type |
Voltage | |
Metal Layers | |
Gate Length (Lg) | |
Contacted Gate Pitch (CPP) | |
Minimum Metal Pitch (MMP) | |
SRAM bitcell | High-Perf (HP) |
High-Density (HD) | |
Low-Voltage (LV) | |
DRAM bitcell | eDRAM |
Value | |
---|---|