From WikiChip
Difference between revisions of "Template:finfet nodes comp"
Line 80: | Line 80: | ||
-->{{#if: {{{process 6 fab|}}}| {{!}}{{!}} Value {{!}}{{!}} {{{process 6 delta from|}}} }} | -->{{#if: {{{process 6 fab|}}}| {{!}}{{!}} Value {{!}}{{!}} {{{process 6 delta from|}}} }} | ||
|- | |- | ||
− | | {{#ifeq: {{{process 1 fin pitch|}}} | - | rowspan="3" colspan="2" style="background: #a3a3a3;" {{!}} N/A | {{{process 1 fin pitch|}}} {{!}}{{!}} }} {{#ifeq: {{{process 1 fin pitch Δ|}}} | - | rowspan="{{#ifeq: {{{process 1 gate len Δ|}}} | - | 10 | 3 }}" style="background: #a3a3a3;" {{!}} N/A | {{#ifeq: {{{process 1 fin pitch|}}} | - | | {{{process 1 fin pitch Δ|}}} }} }}<!-- | + | | {{#ifeq: {{{process 1 fin pitch|}}} | - | rowspan="3" colspan="2" style="background: #a3a3a3;" {{!}} N/A | {{{process 1 fin pitch|}}} {{!}}{{!}} }}<!-- |
− | -->{{# | + | -->{{#ifeq: {{{process 1 fin pitch Δ|}}} | - | rowspan="{{#ifeq: {{{process 1 gate len Δ|}}} | - | 10 | 3 }}" style="background: #a3a3a3;" {{!}} N/A | {{#ifeq: {{{process 1 fin pitch|}}} | - | | {{{process 1 fin pitch Δ|}}} }} }}<!-- |
+ | -->{{#ifeq: {{{process 2 fin pitch|}}} | - | {{!}}{{!}} rowspan="3" colspan="2" style="background: #a3a3a3;" {{!}} N/A | {{!}}{{!}} {{{process 2 fin pitch|}}} {{!}}{{!}} }}<!-- | ||
+ | -->{{#ifeq: {{{process 2 fin pitch Δ|}}} | - | rowspan="{{#ifeq: {{{process 2 gate len Δ|}}} | - | 10 | 3 }}" style="background: #a3a3a3;" {{!}} N/A | {{#ifeq: {{{process 2 fin pitch|}}} | - | | {{{process 2 fin pitch Δ|}}} }} }}<!-- | ||
-->{{#if: {{{process 3 fab|}}}| {{!}}{{!}} {{{process 3 fin pitch|}}} {{!}}{{!}} {{#ifeq: {{{process 3 fin pitch Δ|}}} | - | rowspan="{{#ifeq: {{{process 3 gate len Δ|}}} | - | 10 | 3 }}" style="background: #a3a3a3;" {{!}} N/A | {{{process 3 fin pitch Δ|}}} }} }}<!-- | -->{{#if: {{{process 3 fab|}}}| {{!}}{{!}} {{{process 3 fin pitch|}}} {{!}}{{!}} {{#ifeq: {{{process 3 fin pitch Δ|}}} | - | rowspan="{{#ifeq: {{{process 3 gate len Δ|}}} | - | 10 | 3 }}" style="background: #a3a3a3;" {{!}} N/A | {{{process 3 fin pitch Δ|}}} }} }}<!-- | ||
-->{{#if: {{{process 4 fab|}}}| {{!}}{{!}} {{{process 4 fin pitch|}}} {{!}}{{!}} {{#ifeq: {{{process 4 fin pitch Δ|}}} | - | rowspan="{{#ifeq: {{{process 4 gate len Δ|}}} | - | 10 | 3 }}" style="background: #a3a3a3;" {{!}} N/A | {{{process 4 fin pitch Δ|}}} }} }}<!-- | -->{{#if: {{{process 4 fab|}}}| {{!}}{{!}} {{{process 4 fin pitch|}}} {{!}}{{!}} {{#ifeq: {{{process 4 fin pitch Δ|}}} | - | rowspan="{{#ifeq: {{{process 4 gate len Δ|}}} | - | 10 | 3 }}" style="background: #a3a3a3;" {{!}} N/A | {{{process 4 fin pitch Δ|}}} }} }}<!-- |
Revision as of 06:54, 5 April 2017
Process Name | |
---|---|
1st Production | |
Lithography | Lithography |
Immersion | |
Exposure | |
Wafer | Type |
Size | |
Transistor | Type |
Voltage | |
Fin | Pitch |
Width | |
Height | |
Gate Length (Lg) | |
Contacted Gate Pitch (CPP) | |
Minimum Metal Pitch (MMP) | |
SRAM bitcell | High-Perf (HP) |
High-Density (HD) | |
Low-Voltage (LV) | |
DRAM bitcell | eDRAM |
Value | |||
---|---|---|---|