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Difference between revisions of "Template:finfet nodes comp"
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| {{{process 1 fin width|}}} || {{{process 1 fin width Δ|}}}<!-- | | {{{process 1 fin width|}}} || {{{process 1 fin width Δ|}}}<!-- | ||
− | -->{{#if: {{{process 2 fab|}}}| {{!}}{{!}} {{!}} {{{process 2 fin width|}}} | + | -->{{#if: {{{process 2 fab|}}}| {{!}}{{!}} {{!}} {{{process 2 fin width|}}} {{!}}{{!}} {{{process 2 fin width Δ|}}} }}<!-- |
-->{{#if: {{{process 3 fab|}}}| {{!}}{{!}} {{!}} {{{process 3 fin width|}}} {{!}}{{!}} {{{process 3 fin width Δ|}}} }}<!-- | -->{{#if: {{{process 3 fab|}}}| {{!}}{{!}} {{!}} {{{process 3 fin width|}}} {{!}}{{!}} {{{process 3 fin width Δ|}}} }}<!-- | ||
-->{{#if: {{{process 4 fab|}}}| {{!}}{{!}} {{!}} {{{process 4 fin width|}}} {{!}}{{!}} {{{process 4 fin width Δ|}}} }}<!-- | -->{{#if: {{{process 4 fab|}}}| {{!}}{{!}} {{!}} {{{process 4 fin width|}}} {{!}}{{!}} {{{process 4 fin width Δ|}}} }}<!-- |
Revision as of 03:18, 5 April 2017
Process Name | |
---|---|
1st Production | |
Lithography | Lithography |
Immersion | |
Exposure | |
Wafer | Type |
Size | |
Transistor | Type |
Voltage | |
Fin | Pitch |
Width | |
Height | |
Gate Length (Lg) | |
Contacted Gate Pitch (CPP) | |
Minimum Metal Pitch (MMP) | |
SRAM bitcell | High-Perf (HP) |
High-Density (HD) | |
Low-Voltage (LV) | |
DRAM bitcell | eDRAM |
Value | |
---|---|