Semiconductor & Computer Engineering
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Difference between revisions of "Template:finfet nodes comp"
| Line 7: | Line 7: | ||
-->{{#if: {{{process 3 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 3 fab|}}} }}<!-- | -->{{#if: {{{process 3 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 3 fab|}}} }}<!-- | ||
-->{{#if: {{{process 4 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 4 fab|}}} }}<!-- | -->{{#if: {{{process 4 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 4 fab|}}} }}<!-- | ||
| − | -->{{#if: {{{process 5 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 5 fab|}}} }} | + | -->{{#if: {{{process 5 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 5 fab|}}} }}<!-- |
| + | -->{{#if: {{{process 6 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 6 fab|}}} }} | ||
|- style="text-align: center;" | |- style="text-align: center;" | ||
| − | + | ! colspan="2" | {{{process 1 fab|}}}<!-- | |
| + | -->{{#if: {{{process 2 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 2 name|}}} }}<!-- | ||
| + | -->{{#if: {{{process 3 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 3 name|}}} }}<!-- | ||
| + | -->{{#if: {{{process 4 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 4 name|}}} }}<!-- | ||
| + | -->{{#if: {{{process 5 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 5 name|}}} }}<!-- | ||
| + | -->{{#if: {{{process 6 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 6 name|}}} }} | ||
|- style="text-align: center;" | |- style="text-align: center;" | ||
| − | + | ! colspan="2" | {{{process 1 fab|}}}<!-- | |
| + | -->{{#if: {{{process 2 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 2 date|}}} }}<!-- | ||
| + | -->{{#if: {{{process 3 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 3 date|}}} }}<!-- | ||
| + | -->{{#if: {{{process 4 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 4 date|}}} }}<!-- | ||
| + | -->{{#if: {{{process 5 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 5 date|}}} }}<!-- | ||
| + | -->{{#if: {{{process 6 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 6 date|}}} }} | ||
|- style="text-align: center;" | |- style="text-align: center;" | ||
| − | + | ! colspan="2" | {{{process 1 fab|}}}<!-- | |
| + | -->{{#if: {{{process 2 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 2 lith|}}} }}<!-- | ||
| + | -->{{#if: {{{process 3 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 3 lith|}}} }}<!-- | ||
| + | -->{{#if: {{{process 4 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 4 lith|}}} }}<!-- | ||
| + | -->{{#if: {{{process 5 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 5 lith|}}} }}<!-- | ||
| + | -->{{#if: {{{process 6 fab|}}}| {{!}}{{!}} colspan="2" {{!}} {{{process 6 lith|}}} }} | ||
|- style="text-align: center;" | |- style="text-align: center;" | ||
| colspan="2" | {{{process 1 immersion|}}} || colspan="2" | {{{process 2 immersion|}}} || colspan="2" | {{{process 3 immersion|}}} | | colspan="2" | {{{process 1 immersion|}}} || colspan="2" | {{{process 2 immersion|}}} || colspan="2" | {{{process 3 immersion|}}} | ||
Revision as of 02:39, 5 April 2017
| Process Name | |
|---|---|
| 1st Production | |
| Litho- graphy |
Lithography |
| Immersion | |
| Exposure | |
| Wafer | Type |
| Size | |
| Tran- sistor |
Type |
| Voltage | |
| Fin | Pitch |
| Width | |
| Height | |
| Gate Length (Lg) | |
| Contacted Gate Pitch (CPP) | |
| Minimum Metal Pitch (MMP) | |
| SRAM bitcell |
High-Perf (HP) |
| High-Density (HD) | |
| Low-Voltage (LV) | |
| DRAM bitcell |
eDRAM |
| Value | Value | Value | |||
|---|---|---|---|---|---|