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Difference between revisions of "Template:10 nm comp header"

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  ! style="text-align: right;" colspan="2" | 1st Production
 
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! style="text-align: center;" rowspan="3" | Lithography || style="text-align: right;" | Lithography
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! style="text-align: right;" | Immersion
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! style="text-align: right;" | Exposure
 
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  ! style="text-align: center;" rowspan="2" | Wafer || style="text-align: right;" | Type
 
  ! style="text-align: center;" rowspan="2" | Wafer || style="text-align: right;" | Type

Revision as of 23:21, 4 April 2017

 
Process Name
1st Production
Lithography Lithography
Immersion
Exposure
Wafer Type
Size
Transistor Type
Voltage
 
Fin Pitch
Width
Height
Gate Pitch (Lg)
Contacted Gate Pitch (CPP)
Interconnect Pitch (M1P)
SRAM bitcell High-Perf (HP)
High-Density (HD)
Low-Voltage (LV)
DRAM bitcell eDRAM