From WikiChip
					
    Difference between revisions of "Template:10 nm comp header"    
										|  (fixed) | |||
| (One intermediate revision by one other user not shown) | |||
| Line 7: | Line 7: | ||
|   ! style="text-align: right;" colspan="2" | 1st Production |   ! style="text-align: right;" colspan="2" | 1st Production | ||
|   |- |   |- | ||
| − |   ! style="text-align: center;" rowspan="3" |  | + |   ! style="text-align: center;" rowspan="3" | Litho-<br>graphy || style="text-align: right;" | Lithography | 
|   |- |   |- | ||
|   ! style="text-align: right;" | Immersion |   ! style="text-align: right;" | Immersion | ||
| Line 17: | Line 17: | ||
|   ! style="text-align: right;" | Size |   ! style="text-align: right;" | Size | ||
|   |- |   |- | ||
| − |   ! style="text-align: center;" rowspan="2" |  | + |   ! style="text-align: center;" rowspan="2" | Tran-<br>sistor || style="text-align: right;" | Type | 
|   |- |   |- | ||
|   ! style="text-align: right;" | Voltage |   ! style="text-align: right;" | Voltage | ||
| Line 29: | Line 29: | ||
|   ! style="text-align: right;" | Height |   ! style="text-align: right;" | Height | ||
|   |- |   |- | ||
| − |   ! style="text-align: right;" colspan="2" | Gate  | + |   ! style="text-align: right;" colspan="2" | Gate Length (L<sub>g</sub>) | 
|   |- |   |- | ||
|   ! style="text-align: right;" colspan="2" | Contacted Gate Pitch (CPP) |   ! style="text-align: right;" colspan="2" | Contacted Gate Pitch (CPP) | ||
| Line 35: | Line 35: | ||
|   ! style="text-align: right;" colspan="2" | Minimum Metal Pitch (MMP) |   ! style="text-align: right;" colspan="2" | Minimum Metal Pitch (MMP) | ||
|   |- |   |- | ||
| − |   ! style="text-align: right;" rowspan="3" | SRAM bitcell || style="text-align: right;" | High-Perf (HP) | + |   ! style="text-align: right;" rowspan="3" | SRAM <br>bitcell || style="text-align: right;" | High-Perf (HP) | 
|   |- |   |- | ||
|   ! style="text-align: right;" | High-Density (HD) |   ! style="text-align: right;" | High-Density (HD) | ||
| Line 41: | Line 41: | ||
|   ! style="text-align: right;" | Low-Voltage (LV) |   ! style="text-align: right;" | Low-Voltage (LV) | ||
|   |- |   |- | ||
| − |   ! style="text-align: right;" rowspan="3" | DRAM bitcell || style="text-align: right;" | eDRAM | + |   ! style="text-align: right;" rowspan="3" | DRAM <br>bitcell || style="text-align: right;" | eDRAM | 
| |} | |} | ||
Latest revision as of 18:09, 19 March 2025
| Process Name | |
|---|---|
| 1st Production | |
| Litho- graphy | Lithography | 
| Immersion | |
| Exposure | |
| Wafer | Type | 
| Size | |
| Tran- sistor | Type | 
| Voltage | |
| Fin | Pitch | 
| Width | |
| Height | |
| Gate Length (Lg) | |
| Contacted Gate Pitch (CPP) | |
| Minimum Metal Pitch (MMP) | |
| SRAM bitcell | High-Perf (HP) | 
| High-Density (HD) | |
| Low-Voltage (LV) | |
| DRAM bitcell | eDRAM |