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[[File:tech node naming.svg]]
 
[[File:tech node naming.svg]]
 
== History==
 
== History==
{{see also|intel/process|dec/process|l1=Intel's Semiconductor Process History||l2=DEC's Semiconductor Process History}}
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{{see also|intel/process|l1=Intel's Semiconductor Process History}}
 
Roughly for the first 35 years of the semiconductor history, since the first mass production of [[MOSFET]] in the 1960s to the late 1990s, the process node more or less referred to the transistor's [[gate length]] (L<sub>g</sub>) which was also considered the "minimum feature size". For example, [[Intel]]'s [[0.5 µm process]] had <code>L<sub>g</sub> = 0.5 µm</code>. This lasted until the [[0.25 µm process]] in [[1997]] at which point Intel started introducing more aggressive gate length scaling. For example, their [[0.25 µm process]] had <code>L<sub>g</sub> = 0.20 µm</code> and likewise, their [[0.18 µm process]] had <code>L<sub>g</sub> = 0.13 µm</code> (a node ahead). At those nodes the "process node" was effectively larger than the gate length.
 
Roughly for the first 35 years of the semiconductor history, since the first mass production of [[MOSFET]] in the 1960s to the late 1990s, the process node more or less referred to the transistor's [[gate length]] (L<sub>g</sub>) which was also considered the "minimum feature size". For example, [[Intel]]'s [[0.5 µm process]] had <code>L<sub>g</sub> = 0.5 µm</code>. This lasted until the [[0.25 µm process]] in [[1997]] at which point Intel started introducing more aggressive gate length scaling. For example, their [[0.25 µm process]] had <code>L<sub>g</sub> = 0.20 µm</code> and likewise, their [[0.18 µm process]] had <code>L<sub>g</sub> = 0.13 µm</code> (a node ahead). At those nodes the "process node" was effectively larger than the gate length.
  

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