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{{title|Mask / Reticle}}[[File:mask diagram.svg|thumb|right]][[File:Chromium photomask (details).JPG|thumb|200px|right|A detailed picture of the opaque and transparent patterns on a chromium mask.]] | {{title|Mask / Reticle}}[[File:mask diagram.svg|thumb|right]][[File:Chromium photomask (details).JPG|thumb|200px|right|A detailed picture of the opaque and transparent patterns on a chromium mask.]] | ||
− | A '''mask''' or '''reticle''' (sometimes '''photomask''' and '''photoreticle''') is | + | A '''mask''' or '''reticle''' (sometimes '''photomask''' and '''photoreticle''') is pattern transferring device used in the fabrication of microelectronic for pattern transfers. |
== Overview == | == Overview == | ||
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== Reticle limit == | == Reticle limit == | ||
− | Current i193 and [[EUV]] lithography steppers have a maximum field size of 26 mm by 33 mm or 858 mm². In future [[High-NA EUV]] lithography steppers the reticle limit will be halved to 26 mm by 16,5 mm or 429 mm² due to the use of | + | Current i193 and [[EUV]] lithography steppers have a maximum field size of 26 mm by 33 mm or 858 mm². In future [[High-NA EUV]] lithography steppers the reticle limit will be halved to 26 mm by 16,5 mm or 429 mm² due to the use of an amorphous lens array. |
==See also== | ==See also== | ||
* [[mask count]] | * [[mask count]] | ||
* [[mask set]] | * [[mask set]] |