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{{title|Mask / Reticle}}[[File:mask diagram.svg|thumb|right]][[File:Chromium photomask (details).JPG|thumb|200px|right|A detailed picture of the opaque and transparent patterns on a chromium mask.]]
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[[File:Chromium photomask (details).JPG|thumb|200px|right|A detailed picture of the opaque and transparent patterns on a chromium mask.]]
A '''mask''' or '''reticle''' (sometimes '''photomask''' and '''photoreticle''') is a pattern transferring device used in the fabrication of microelectronic for pattern transfers.
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A '''mask''' or '''reticle''' (sometimes '''photomask''' and '''photoreticle''') is a quartz plate with opaque and transparent patterns. A mask works much like a [[wikipedia:Negative (photography)|negative]] - by shining light through the mask, the detailed device image can then be projected onto the [[wafer]] (see [[photoresist]]).
 
 
== Overview ==
 
A mask is a pattern transferring device, a glass or fused silica/quartz plate with opaque and transparent patterns on its surface. A mask works much like a [[wikipedia:Negative (photography)|negative]] - by shining light through the mask, the detailed device image can then be projected onto the [[wafer]] (see [[photoresist]]). The transmitted image is often passed through some sort of lens capable of de-magnifying the images before reaching the receiving substrate.
 
  
 
Each individual mask contains a single pattern which when stacked together forms the common electrical elements such as [[resistors]], [[capacitors]] and [[transistors]]. An entire [[mask set]] is then fed into a [[photolithography stepper]] which cycle through the set, exposing individual masks to the [[wafers]] to form the circuitry needed.
 
Each individual mask contains a single pattern which when stacked together forms the common electrical elements such as [[resistors]], [[capacitors]] and [[transistors]]. An entire [[mask set]] is then fed into a [[photolithography stepper]] which cycle through the set, exposing individual masks to the [[wafers]] to form the circuitry needed.
 
== Terminology ==
 
[[File:intel mask.jpg|right|thumb|Modern Intel 6" [[14 nm]]/[[10 nm]] test reticle.]]
 
Historically, a '''mask''' or '''photomask''' referred to a pattern transferring device that contained the entire pattern of a single layer of a full wafer. A '''reticle''', on the other hand, referred to a single layer of pattern that covers a small portion of the wafer. A reticle has to be stepped and repeated in order to expose the entire wafer. In other words, compared to a reticle, a mask used to refer to a pattern that could be printed in a single exposure to cover the entire wafer without any optical de-magnification. Today, the terms are often used synonymously.
 
 
 
Below is a 5-inch IBM reticle next to a 4-inch AMI Semi photomask.
 
 
 
:[[File:mask v reticle.png|800px]]
 
  
 
==Manufacturing Process==
 
==Manufacturing Process==
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It is during that stage that the mask blank with the writing is finely inspected for quality. If any issues are observed the mask is recycled and gets re-written. If the mask passes inspection the written pattern is then etched. [[Plasma etching]] is done via a [[plasma etcher]] which sprays ions onto the mask penetration and dissolving the chromium in the exposed areas. Finally the leftover resistant is removed forming the final product - a mask with transparent and opaque patterns.
 
It is during that stage that the mask blank with the writing is finely inspected for quality. If any issues are observed the mask is recycled and gets re-written. If the mask passes inspection the written pattern is then etched. [[Plasma etching]] is done via a [[plasma etcher]] which sprays ions onto the mask penetration and dissolving the chromium in the exposed areas. Finally the leftover resistant is removed forming the final product - a mask with transparent and opaque patterns.
 
== Reticle limit ==
 
Current i193 and [[EUV]] lithography steppers have a maximum field size of 26 mm by 33 mm or 858 mm². In future [[High-NA EUV]] lithography steppers the reticle limit will be halved to 26 mm by 16,5 mm or 429 mm² due to the use of anamorphic lens array.
 
  
 
==See also==
 
==See also==
 
* [[mask count]]
 
* [[mask count]]
 
* [[mask set]]
 
* [[mask set]]
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