Editing chiplet

{{title|Chiplet}}
A '''chiplet''' is an [[integrated circuit]] block that is part of a chip that consists of multiple such chiplets. In such chips, a system is subdivided into functional circuit blocks, called "chiplets", that are often reusable IP blocks.

== Overview ==
Chiplets refer to the independent constituents which make up a large chip built out of multiple smaller dies. Historically the need to go with multiple chips was driven by the [[reticle limit]] which dictated the maximum size of chip possible to be [[fabricated]]. Designs that exceeded the reticle limit had to be split up into smaller dies in order to be manufacturable. More recently, the desire to move to a chiplet-based designed has been driven by the increasing cost of manufacturing devices on leading-edge process nodes. Due to the cost associated with leading-edge nodes, it became advantageous to break down a large die into smaller 'chiplets' in order to improve [[yield]] and [[binning]].

=== Motivation ===
[[File:amd iedm 2017 dr lisa su keynote 7nm cost.png|thumb|right|At IEDM 2017, AMD CEO Dr. Lisa Su reported cost per yielded mm² for a 250 mm² die.]]
As the industry moves to smaller [[process nodes]], costs for yielding large dies continues to increase. Compared to 250 mm² [[die]] on the [[45 nm process]], the [[16 nm process]] more than doubles the cost/mm² and the [[7 nm process]] nearly double that to 4x the cost per yielded mm². Moving to the [[5 nm]] and even [[3 nm]] nodes, the cost is expected to continue to increase. Fabricating large monolithic dies will becomes increasingly less economical. One solution to easing the economics of manufacturing chips with a large amount of [[transistors]], the industry has started shifting to chiplet-based design whereby a single chip is broken down into multiple smaller chiplets.

Consider a [[D0]] of 0.1 defects per cm². Below is a plot of percent of [[yield]] per wafer for a die of various sizes versus the same die consisting of two, three, and four chiplets. Note that an additional 10% overhead for the cross-die communication has been added to the chiplet-based design.

:[[File:monolithic design vs chiplet yield.png|800px]]

From the graph above, it can be seen that a 360 mm² monolithic die will have an [[yield]] of 15% while a 4-chiplet design (each 99 mm²) more than doubles the yield to 37%. The total die area of the 4-chiplet design incurs a ~10% area penalty (36 mm² for a combined silicon area of 396 mm²) but the significant improvement in [[yield]] which directly translates to lower cost more than justifies this.

== Challenges ==
{{empty section}}

== Bibliography ==
* IEDM 2017, Dr. Lisa Su. Keynote presentation.

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@@ Line 1: / Line 1: @@
-{{title|Chiplet}}[[File:chiplet design.svg|thumb|class=wikichip_ogimage|right|400px|Chiplet-based design.]]
+{{title|Chiplet}}
-A '''chiplet''' is an [[integrated circuit]] block that has been specifically designed to work with other similar chiplets to form larger more complex chips. In such chips, a system is subdivided into functional circuit blocks, called "chiplets", that are often made of reusable IP blocks.
+A '''chiplet''' is an [[integrated circuit]] block that is part of a chip that consists of multiple such chiplets. In such chips, a system is subdivided into functional circuit blocks, called "chiplets", that are often reusable IP blocks.
 == Overview ==
-Chiplets refer to the independent constituents which make up a large chip built out of multiple smaller dies. Historically the need to go with multiple chips was driven by the [[reticle limit]] which dictated the maximum size of chip possible to be [[fabricated]]. Designs that exceeded the reticle limit had to be split up into smaller dies in order to be manufacturable. As [[process technologies]] continued to enable higher integration, multiple dies were merged into single, more complex integrated circuits. More recently, economics has resulted in a reversal of that trend. The desire to move to a chiplet-based design has been driven by the increasing cost of manufacturing devices on leading-edge process nodes. Due to the cost associated with leading-edge nodes, it became advantageous to, once again, de-integrate and break down a large die into smaller 'chiplets' in order to improve [[yield]] and [[binning]].
+Chiplets refer to the independent constituents which make up a large chip built out of multiple smaller dies. Historically the need to go with multiple chips was driven by the [[reticle limit]] which dictated the maximum size of chip possible to be [[fabricated]]. Designs that exceeded the reticle limit had to be split up into smaller dies in order to be manufacturable. More recently, the desire to move to a chiplet-based designed has been driven by the increasing cost of manufacturing devices on leading-edge process nodes. Due to the cost associated with leading-edge nodes, it became advantageous to break down a large die into smaller 'chiplets' in order to improve [[yield]] and [[binning]].
 === Motivation ===
@@ Line 9: / Line 9: @@
 As the industry moves to smaller [[process nodes]], costs for yielding large dies continues to increase. Compared to 250 mm² [[die]] on the [[45 nm process]], the [[16 nm process]] more than doubles the cost/mm² and the [[7 nm process]] nearly double that to 4x the cost per yielded mm². Moving to the [[5 nm]] and even [[3 nm]] nodes, the cost is expected to continue to increase. Fabricating large monolithic dies will becomes increasingly less economical. One solution to easing the economics of manufacturing chips with a large amount of [[transistors]], the industry has started shifting to chiplet-based design whereby a single chip is broken down into multiple smaller chiplets.
-==== Example ====
+Consider a [[D0]] of 0.1 defects per cm². Below is a plot of percent of [[yield]] per wafer for a die of various sizes versus the same die consisting of two, three, and four chiplets. Note that an additional 10% overhead for the cross-die communication has been added to the chiplet-based design.
-Consider a [[D0]] of 0.1 defects per cm². Now, consider a medium-sized die 18 mm x 20 mm (360 mm²). On a standard 300-millimiter [[wafer size]], up to 150 [[dies]] can be fabricated.
-:<math>N_\text{total} = \frac{\pi \times (R - \sqrt{A})^2}{A} = \frac{\pi \times (150 \text{mm} - \sqrt{360 \text{mm²}})^2}{360 \text{mm²}} = 150</math>
-Splitting up the same die into four chiplets - 9.5 mm x 10.5 mm (~99 mm²) results in 622 dies instead.
-:<math>N_\text{total} = \frac{\pi \times (150 \text{mm} - \sqrt{99 \text{mm²}})^2}{99 \text{mm²}} = 622</math>
-:[[File:360mm2 wafer example.svg|600px]]
-Below is a plot of percent of [[yield]] per wafer for a die of various sizes versus the same die consisting of two, three, and four chiplets. Note that an additional 10% overhead for the cross-die communication has been added to the chiplet-based design.
 :[[File:monolithic design vs chiplet yield.png|800px]]
@@ Line 30: / Line 17: @@
 == Challenges ==
 {{empty section}}
-== Technologies ==
-=== Packaging ===
-* Intel {{intel|Foveros}}, {{intel|EMIB}}
-* TSMC {{tsmc|CoWoS}}, {{tsmc|SoIC}}
-* CEA-Leti [[cea-leti/microarchitectures/tsarlet|Tsarlet µarch]], Active Interposer
-=== Interconnect ===
-* Intel {{intel|AIB}}, {{intel|UIB}}, {{intel|UPI}}
-* AMD {{amd|HyperTransport|HT}}, {{amd|Infinity Fabric|IF}}
-* TSMC {{tsmc|LIPINCON}}
-* [[CCIX]], [[Gen-Z]], [[OpenCAPI]]
-{{expand list}}
 == Bibliography ==
-* EU FP7 [https://ieeexplore.ieee.org/document/6927246 EUROSERVER Project], 2013-2017
 * IEDM 2017, Dr. Lisa Su. Keynote presentation.
+{{stub}}