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Editing carrier mobility
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== Characteristics == | == Characteristics == | ||
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− | It's worth noting that as the | + | It's worth noting that as the time between collisions (<math>\tau_c</math>) increases, then mobility increases. Likewise, the lighter the particle (<math>m</math>), then mobility also increases. |
In the case of a [[semiconductor]] such as silicon, at a fixed temperature (e.g., ambient temperature), the mobility will depend on doping. For the same doping level, <math>\mu_n</math> > <math>\mu_p</math>, therefore holes are "heavier" than electrons. Additionally, for low doping level, <math>\mu</math> will be mostly limited by collisions with lattice (as temperature is increased, <math>\mu</math> will decrease). With medium and high doping levels collisions with ionized impurities will limit mobility. | In the case of a [[semiconductor]] such as silicon, at a fixed temperature (e.g., ambient temperature), the mobility will depend on doping. For the same doping level, <math>\mu_n</math> > <math>\mu_p</math>, therefore holes are "heavier" than electrons. Additionally, for low doping level, <math>\mu</math> will be mostly limited by collisions with lattice (as temperature is increased, <math>\mu</math> will decrease). With medium and high doping levels collisions with ionized impurities will limit mobility. |