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Editing 7 nm lithography process

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== Overview ==
 
== Overview ==
First introduced by the major foundries around the [[2018]]-19 timeframe, the 7-nanometer [[process technology]] is characterized by its use of [[FinFET]] transistors with fin pitches in the 30s of nanometer and densest metal pitches in the upper 30s or low 50s of nanometers. Due to the small feature sizes, [[quad patterning]] had to be utilized for some layers. This process was introduced just as [[EUV Lithography]] became ready for mass production, therefore some foundries utilized EUV while others didn't.  
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First introduced by the major foundries around the [[2018]]-19 timeframe, the 7-nanometer [[process technology]] is characterized by its use of [[FinFET]] transistors with fin pitches in the 30s of nanometer and densest metal pitches in the upper 30s or low 40s of nanometers. Due to the small feature sizes, [[quad patterning]] had to be utilized for some layers. This process was introduced just as [[EUV Lithography]] became ready for mass production, therefore some foundries utilized EUV while others didn't. Note that Intel [[10 nm process]] is comparable to the foundry 7-nanometer node.
  
 
=== Density ===
 
=== Density ===
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== Industry ==
 
== Industry ==
now four companies are currently planning or developing a 7-nanometer node: [[Intel]], [[TSMC]], [[Samsung]] and [[SMIC]].
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Only three companies are currently planning or developing a 7-nanometer node: [[Intel]], [[TSMC]], and [[Samsung]].
  
 
{{node comp|node=7 nm}}
 
{{node comp|node=7 nm}}
  
 
=== Intel ===
 
=== Intel ===
==== Intel 7 ====
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==== P1276 ====
===== Intel 7 Ultra =====
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Intel's 7-nanometer process, '''P1276''', will enter risk production at the end of 2020 and ramp in 2021. On February 8 2017 Intel announced a $7B investment in Arizona's Fab 42 which will eventually produce chips on a 7 nm process.
[[File:raptor-lake-v-f-curve-improvements.png|thumb|right|New V-F Curve for the Enhanced Intel 7 process.]]
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Intel introduced an '''enhanced version of the Intel 7 process''' in late 2022 with the introduction of the company's 13th Generation Core processors based on the {{intel|Raptor Lake|l=arch}} microarchitecture. Nicknamed '''"Intel 7 Ultra"''' internally, the new process is a full PDK update over the one used by Alder Lake, their 3rd generation SuperFin Transistor architecture. Intel says this process brings transistors with significantly better channel mobility. At the very high end of the V-F curve, the company says peak frequency is nearly 1 GHz higher now. The curve itself has been improved, shifting prior-generation frequencies by around 200 MHz at ISO-voltage, or alternatively, reducing the voltage by over 50 mV at ISO-frequency.
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Intel has not disclosed the details of the process but the company's current CEO claims it will feature a density that is 2x that of Intel's 10-nanometer node. Intel's prior CEO, Brian Krzanich, mentioned that 7-nanometer will have "2.4x the compaction ratio" of 10 nm. This puts the 7-nanometer node at around 202-250 million [[transistors per square millimeter]].
  
 
=== TSMC ===
 
=== TSMC ===
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* HiSilicon (Huawei)
 
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** {{hisilicon|kirin|990 4G/5G}}
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** {{hisilicon|kirin|990}}
 
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* Exynos (Samsung)
 
* Exynos (Samsung)
 
** {{samsung|exynos 990|990}}
 
** {{samsung|exynos 990|990}}

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