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| {{Lithography processes}} | | {{Lithography processes}} |
− | The '''3 μm lithography process''' was the semiconductor process technology used by some semiconductor companies during the mid 1970s to the mid 1980s. | + | The '''3μm lithography process''' was the semiconductor process technology used by some semiconductor companies during from 1978 to 1985. |
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− | == Industry == | + | == Microprocessors == |
− | | + | * [[Intel 8086]] |
− | {{nodes comp
| + | * [[Intel 8088]] |
− | <!-- Hitachi -->
| + | * [[Intel 80186]] |
− | | process 1 fab = [[Hitachi]]
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− | | process 1 name = Hi-CMOS I
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− | | process 1 date = 1978
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− | | process 1 lith =
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− | | process 1 immersion =
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− | | process 1 exposure =
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− | | process 1 wafer type = Bulk
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− | | process 1 wafer size =
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− | | process 1 transistor = Planar
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− | | process 1 volt = 5 V
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− | | process 1 layers = 1
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− | | process 1 delta from = N/A
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− | | process 1 gate len = 3 µm
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− | | process 1 gate len Δ = -
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− | | process 1 cpp =
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− | | process 1 cpp Δ = -
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− | | process 1 mmp =
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− | | process 1 mmp Δ = -
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− | | process 1 sram hp =
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− | | process 1 sram hp Δ = -
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− | | process 1 sram hd = 896 µm²
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− | | process 1 sram hd Δ = -
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− | | process 1 sram lv =
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− | | process 1 sram lv Δ = -
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− | | process 1 dram =
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− | | process 1 dram Δ = -
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− | | |
− | <!-- VLSI Technology -->
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− | | process 2 fab = [[VLSI Technology]]
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− | | process 2 name =
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− | | process 2 date =
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− | | process 2 lith =
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− | | process 2 immersion =
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− | | process 2 exposure =
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− | | process 2 wafer type = Bulk
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− | | process 2 wafer size =
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− | | process 2 transistor = Planar
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− | | process 2 volt = 5 V
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− | | process 2 layers = 2
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− | | process 2 delta from = N/A
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− | | process 2 gate len = 3 µm
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− | | process 2 gate len Δ = -
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− | | process 2 cpp =
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− | | process 2 cpp Δ = -
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− | | process 2 mmp =
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− | | process 2 mmp Δ = -
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− | | process 2 sram hp =
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− | | process 2 sram hp Δ = -
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− | | process 2 sram hd =
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− | | process 2 sram hd Δ = -
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− | | process 2 sram lv =
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− | | process 2 sram lv Δ = -
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− | | process 2 dram =
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− | | process 2 dram Δ = -
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− | }}
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− | | |
− | == 3 μm Microprocessors ==
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− | * Intel | |
− | ** {{intel|8085}}
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− | ** {{intel|8086}}
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− | ** {{intel|8088}}
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− | ** {{intel|80186}}
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| * [[Novix NC4016]] | | * [[Novix NC4016]] |
− | * Dec
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− | ** {{decc|MicroVAX 78032}}
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− | * Siemens
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− | ** {{siemens|SAB 80199}}
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− | * Fairchild
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− | ** {{fairchild|6800}}
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− | * Toshiba
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− | ** {{toshiba|8085}}
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− | * National
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− | ** {{national|COPS II}}
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− | * ARM
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− | ** {{armh|ARM1|l=arch}}
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− | {{expand list}}
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− |
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− | == 3 μm Microcontrollers ==
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− | * Intel
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− | ** {{intel|MCS-41}}
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− | ** {{intel|MCS-48}}
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− | ** {{intel|MCS-51}}
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− |
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− | == 3 μm Chips ==
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− | * Intel
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− | ** {{intel|8087}}
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− | ** {{intel|8089}}
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− | ** {{intel|8220}}
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− | * National
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− | ** {{national|32081}}
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− | * AMD
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− | ** {{amd|2901}}
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− |
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− | == References ==
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− | * Hitachi
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− | ** Sakai, Yoshio, et al. "High packing density, high speed CMOS (Hi-CMOS) device technology." Japanese Journal of Applied Physics 18.S1 (1979): 73.
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− | ** Minato, O., et al. "A Hi-CMOSII 8Kx8 bit static RAM." IEEE Journal of Solid-State Circuits 17.5 (1982): 793-798.
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− | ** Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.
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− | [[category:lithography]] | + | {{stub}} |
| + | [[Category:Lithography]] |