Semiconductor & Computer Engineering
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Difference between revisions of "65 nm lithography process"
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| − | The '''65 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[80 nm lithography process|80 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 65 nm process began in 2005. This technology was superseded by the [[55 nm lithography process|55 nm process]] (HN) / [[45 nm lithography process|45 nm process]] (FN) in 2007. | + | The '''65 nanometer (65 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[80 nm lithography process|80 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 65 nm process began in 2005. This technology was superseded by the [[55 nm lithography process|55 nm process]] (HN) / [[45 nm lithography process|45 nm process]] (FN) in 2007. |
== Industry == | == Industry == | ||
Revision as of 04:55, 24 May 2016
Semiconductor lithography processes technology
The 65 nanometer (65 nm) lithography process is a full node semiconductor manufacturing process following the 80 nm process stopgap. Commercial integrated circuit manufacturing using 65 nm process began in 2005. This technology was superseded by the 55 nm process (HN) / 45 nm process (FN) in 2007.
Contents
Industry
| Fab |
|---|
| Process Name |
| 1st Production |
| Wafer |
| Metal Layers |
| |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell (HD) |
| SRAM bit cell (LP) |
| DRAM bit cell |
| Intel | IBM / Toshiba / Sony / AMD | TI | IBM / Chartered / Infineon / Samsung | TSMC | Fujitsu | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| P1264 | CS-200/CS-201/CS-250 | ||||||||||
| 2005 | 2005 | 2007 | 2005 | 2005 | 2006 | ||||||
| 300mm | |||||||||||
| 8 | 10 | 11 | 10 | 11 | |||||||
| Value | 90 nm Δ | Value | 90 nm Δ | Value | 90 nm Δ | Value | 90 nm Δ | Value | 90 nm Δ | Value | 90 nm Δ |
| 220 nm | 0.85x | 250 nm | ?x | ? nm | ?x | 200 nm | 0.82x | 160 nm | 0.67x | ? nm | ?x |
| 210 nm | 0.95x | ? nm | ?x | ? nm | ?x | 180 nm | 0.73 | 180 nm | 0.75x | ? nm | ?x |
| 0.570 µm2 | 0.57x | 0.65 µm2 | 0.65x | 0.49 µm2 | 0.499 µm2 | 0.50x | |||||
| 0.680 µm2 | 0.540 µm2 | 0.490 µm2 | 0.540 µm2 | 0.525 µm2 | 0.53x | ? µm2 | ?x | ||||
| 0.127 µm2 | 0.67x | ||||||||||
Design Rules
| Intel 65nm Design Rules | |||
|---|---|---|---|
| Layer | Pitch | Thick | Aspect Ratio |
| Isolation | 220 nm | 320 nm | - |
| Polysilicon | 220 nm | 90 nm | - |
| Contacted Gate | 220 nm | - | |
| Metal 1 | 210 nm | 170 nm | 1.6 |
| Metal 2 | 210 nm | 190 nm | 1.8 |
| Metal 3 | 220 nm | 200 nm | 1.8 |
| Metal 4 | 280 nm | 250 nm | 1.8 |
| Metal 5 | 330 nm | 300 nm | 1.8 |
| Metal 6 | 480 nm | 430 nm | 1.8 |
| Metal 7 | 720 nm | 650 nm | 1.8 |
| Metal 8 | 1.80 µm | 975 nm | 1.8 |
65 nm Microprocessors
- AMD
- Fujitsu
- IBM
- Intel
- Sun
This list is incomplete; you can help by expanding it.
65 nm System on Chips
This list is incomplete; you can help by expanding it.
65 nm Microarchitectures
- Intel
This list is incomplete; you can help by expanding it.
