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Information for "alchemy/au1100-500mbd"

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Display titleAlchemy Au1100-500MBD
Default sort keyalchemy/au1100-500mbd
Page length (in bytes)4,306
Page ID36591
Page content languageEnglish (en)
Page content modelwikitext
Indexing by robotsAllowed
Number of redirects to this page0
Counted as a content pageYes
Number of subpages of this page0 (0 redirects; 0 non-redirects)

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Page creatorQuietRub (talk | contribs)
Date of page creation09:02, 17 March 2022
Latest editorQuietRub (talk | contribs)
Date of latest edit09:02, 17 March 2022
Total number of edits1
Total number of distinct authors1
Recent number of edits (within past 90 days)0
Recent number of distinct authors0

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Facts about "Alchemy Au1100-500MBD"
base frequency500 MHz (0.5 GHz, 500,000 kHz) +
core count1 +
core steppingBA +, BC +, BD +, BE + and BF +
core voltage1.22 V (12.2 dV, 122 cV, 1,220 mV) +
designerAlchemy +
familyAlchemy +
first launchedApril 8, 2002 +
full page namealchemy/au1100-500mbd +
has ecc memory supportfalse +
instance ofmicroprocessor +
io voltage3.3 V (33 dV, 330 cV, 3,300 mV) +
isaMIPS32 +
l1$ size32 KiB (32,768 B, 0.0313 MiB) +
l1d$ description4-way set associative +
l1d$ size16 KiB (16,384 B, 0.0156 MiB) +
l1i$ description4-way set associative +
l1i$ size16 KiB (16,384 B, 0.0156 MiB) +
ldateApril 8, 2002 +
manufacturerTSMC +
market segmentEmbedded +
max case temperature343.15 K (70 °C, 158 °F, 617.67 °R) +
max cpu count1 +
max memory192 MiB (196,608 KiB, 201,326,592 B, 0.188 GiB, 1.831055e-4 TiB) +
max memory bandwidth0.466 GiB/s (476.837 MiB/s, 0.5 GB/s, 500 MB/s, 4.547474e-4 TiB/s, 5.0e-4 TB/s) +
max memory channels1 +
max storage temperature398.15 K (125 °C, 257 °F, 716.67 °R) +
microarchitectureAu1 +
min case temperature273.15 K (0 °C, 32 °F, 491.67 °R) +
min storage temperature233.15 K (-40 °C, -40 °F, 419.67 °R) +
model numberAu1100-500MBD +
nameAlchemy Au1100-500MBD +
part numberAu1100-500MBDBA +, Au1100-500MBDBC +, Au1100-500MBDBD +, Au1100-500MBDBE + and Au1100-500MBDBF +
process130 nm (0.13 μm, 1.3e-4 mm) +
smp max ways1 +
supported memory typeSDR-133 +
tdp (typical)0.4 W (400 mW, 5.364e-4 hp, 4.0e-4 kW) +
technologyCMOS +
word size32 bit (4 octets, 8 nibbles) +