Semiconductor & Computer Engineering
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Difference between revisions of "static random-access memory"
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{{title|Static Random-Access Memory (SRAM)}} | {{title|Static Random-Access Memory (SRAM)}} | ||
| − | '''Static random-access memory''' ('''Static RAM''' or '''SRAM''') is a simple [[memory device]] that implements a [[random-access memory]]-based storage that holds data in a static form. That is, static [[RAM]] retains its data for as long as the memory device has power. SRAM is the most common type of memory cell found in most [[VLSI]] designs. | + | '''Static random-access memory''' ('''Static RAM''' or '''SRAM''') is a simple semiconductor [[memory device]] that implements a [[random-access memory]]-based storage that holds data in a static form. That is, static [[RAM]] retains its data for as long as the memory device has power. SRAM is the most common type of memory cell found in most [[VLSI]] designs. |
== Overview == | == Overview == | ||
Revision as of 15:05, 31 January 2019
Static random-access memory (Static RAM or SRAM) is a simple semiconductor memory device that implements a random-access memory-based storage that holds data in a static form. That is, static RAM retains its data for as long as the memory device has power. SRAM is the most common type of memory cell found in most VLSI designs.
Contents
Overview
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Applications
Operation
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Cells
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4T Cell
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6T Cell
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8T Cell
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Leading-edge SRAM
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