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Process Technology - Intel
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Revision as of 02:29, 11 May 2017 by David (talk | contribs) (Timeline)

This article details Intel's Semiconductor Process Technology.

Timeline

YearProcess NameNode NameMetal LayersµarchsAttributes
1982 P646 1.5 µm 2 80286,
80386
Lg1,500 nm
Tox? nmGate DielectricSi2N2O
Vdd? V
1987 P648 1.0 µm 2 80486 Lg1,000 nm
Tox? nmGate Dielectric
Vdd? V
1989 P650 0.8 µm 3 80486 Lg800 nm
Tox? nmGate Dielectric
Vdd? V
1993 P852 0.5 µm 4 P5 Lg500 nm
Tox8.0 nmGate Dielectric
Vdd3.3 V
1995 P854 0.35 µm 4 P6 Lg350 nm
Tox5.2 nmGate Dielectric
Vdd2.5 V
1997 P856
P856.5
0.25 µm 5 P6 Lg200 nm
Tox3.1 nmGate DielectricSiO2
Vdd1.8 V
1999 P858 0.18 µm 6 NetBurst Lg130 nm
Tox2.0 nmGate DielectricSiO2
Vdd1.6 V
2001 P860 0.13 µm 6 Pentium M Lg70 nm
Tox1.4 nmGate DielectricSiO2
Vdd1.4 V
2003 P1262 90 nm 7 Pentium M Lg50 nm
Tox1.2 nmGate DielectricSiO2
Vdd1.2 V
2005 P1264 65 nm 8 Core,
Modified Pentium M
Lg35 nm
Tox? nmGate DielectricSiO2
Vdd? V
2007 P1266 45 nm 9 Penryn,
Nehalem
Lg25 nm
Tox? nmGate DielectricHigh-κ
Vdd? V
2009 P1268 32 nm 10 Westmere,
Sandy Bridge
Lg30 nm
Tox? nmGate DielectricHigh-κ
Vdd? V
2011 P1270 22 nm 11 Ivy Bridge,
Haswell
Lg26 nm
Tox? nmGate DielectricHigh-κ
Vdd? V
2014 P1272 14 nm 11 Broadwell,
Skylake,
Kaby Lake,
Coffee Lake
Lg20 nm
Tox? nmGate DielectricHigh-κ
Vdd? V
2017 P1274 10 nm Cannonlake,
Icelake,
Tigerlake
Lg18? nm
Tox? nmGate DielectricHigh-κ
Vdd? V
2019 P1276 7 nm
2022 P1278 5 nm