Semiconductor & Computer Engineering
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| − | {{title|Deep Trench Capacitor (DTC)}} | + | {{title|Deep Trench Capacitor (DTC)}}[[File:ibm 32-nanometer deep trench capacitors.png|right|thumb|[[IBM]] [[32-nanometer]] DTCs used for [[eDRAM]].]] |
A '''deep trench capacitor''' ('''DTC''') is a three-dimentional vertical [[capacitors]] formed by etching a [[deep trench]] (DT) into a silicon substrate. | A '''deep trench capacitor''' ('''DTC''') is a three-dimentional vertical [[capacitors]] formed by etching a [[deep trench]] (DT) into a silicon substrate. | ||
Revision as of 02:07, 13 December 2019
A deep trench capacitor (DTC) is a three-dimentional vertical capacitors formed by etching a deep trench (DT) into a silicon substrate.
Contents
Overview
Deep trench capacitors (DTCs) are vertical semiconductor devices that are used to add capacitance to various integrated circuits.
Memory
DTCs forms the main storage capacitor for one of main families of DRAM-based cells.
Logic
DTCs are unique in many ways from other capacitors. First, they are formed by etching deep trenches (DTs) into the substrate. This enables very high capacitance density, especially when they are coupled in parallel. Secondly, because they tend to be very thin and deep, when combined with the logic above, they may be used to form very dense structures such as embedded DRAM, PLL loop filters, decoupling circuitry, and other power applications.
