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{{main|/complementary topology|l1=CMOS Complementary Topology}}
 
{{main|/complementary topology|l1=CMOS Complementary Topology}}
 
CMOS primarily makes use of what would otherwise be two separate circuit technologies - [[pmos transistor|pMOS]] and [[nMOS transistor|nMOS]]. To better understand this, consider an [[nMOS transistor]]. Because it can pull no higher than V<sub>DD</sub> - V<sub>t</sub> we get a degraded 1 output. Likewise with pMOS, we can pull no lower than V<sub>t</sub> - a degraded 0 output. By combining both types, we can borrow the desired characteristics from both transistors such as a strong 0 and a strong 1.
 
CMOS primarily makes use of what would otherwise be two separate circuit technologies - [[pmos transistor|pMOS]] and [[nMOS transistor|nMOS]]. To better understand this, consider an [[nMOS transistor]]. Because it can pull no higher than V<sub>DD</sub> - V<sub>t</sub> we get a degraded 1 output. Likewise with pMOS, we can pull no lower than V<sub>t</sub> - a degraded 0 output. By combining both types, we can borrow the desired characteristics from both transistors such as a strong 0 and a strong 1.
[[File:cmos comp topo.gif|right]]
 
CMOS circuits are designed with that concept in mind - always consisting of two separate sub-circuits called a '''PUN''' ({{cmos|pull-up network}}) and a '''PDN''' ({{cmos|pull-down network}}). CMOS logic must therefore by in one of two defined stages:
 
* PUN is open; PDN is conducting
 
* PUN is conducting; PDN is open
 
Conceptually they can be thought of as two switches, one controlling the connection between the output and V<sub>DD</sub> and one controlling the connection between the output and GND. Therefore it's important to note that if both switches are closed or both switches are open, the output will be ambiguous. The concept of a [[/complementary topology|complementary topology]] ensures this does not happen. It should be noted that as the voltage on the transistor's gate changes, for a very brief moment both switches will be closed thereby creating a momentary spike in power consumption. This does become a problem with high frequency CMOS.
 
  
 
=== Inverter Example ===
 
=== Inverter Example ===
 
{{main|inverter}}
 
{{main|inverter}}
[[File:cmos inverter.svg|thumb|right|125px|CMOS [[NOT gate]]]]
 
 
The simplest gate that can be implemented is the [[NOT gate]] which simply inverts the input. We can implement an inverter using a single nMOS and pMOS transistors. The pMOS transistor is connected to V<sub>DD</sub> while the nMOS transistor is connected to GND. When ''A'' is 0, the nMOS transistor turns OFF and the pMOS transistor turns ON. This results in ''Q'' being pulled up to 1 since the pMOS transistor will conduct V<sub>DD</sub>. Conversely, when ''A'' is 1, the nMOS transistor turns ON and the pMOS transistor turns OFF, thereby pulling ''Q'' down to GND.
 
The simplest gate that can be implemented is the [[NOT gate]] which simply inverts the input. We can implement an inverter using a single nMOS and pMOS transistors. The pMOS transistor is connected to V<sub>DD</sub> while the nMOS transistor is connected to GND. When ''A'' is 0, the nMOS transistor turns OFF and the pMOS transistor turns ON. This results in ''Q'' being pulled up to 1 since the pMOS transistor will conduct V<sub>DD</sub>. Conversely, when ''A'' is 1, the nMOS transistor turns ON and the pMOS transistor turns OFF, thereby pulling ''Q'' down to GND.
  

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