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Difference between revisions of "arm holdings/microarchitectures/cortex-a7"
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|process=40 nm
 
|process=40 nm
 
|process 2=28 nm
 
|process 2=28 nm
 +
|isa=ARMv7
 
|predecessor=Cortex-A9
 
|predecessor=Cortex-A9
 
|predecessor link=arm_holdings/microarchitectures/cortex-a9
 
|predecessor link=arm_holdings/microarchitectures/cortex-a9
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== Architecture ==
 
== Architecture ==
 
=== Key changes from {{\\|Cortex-A9}} ===
 
=== Key changes from {{\\|Cortex-A9}} ===
{{empty section}}
+
* [[28 nm process]] (from [[40 nm]])
 +
* New [[in-order]] pipeline (form [[out-of-order]])
 +
** Shorter [[pipeline]] (8, down from 9-12)
 +
*** 0.5x frequency (1 GHz, down from 2 GHz)
 +
* Integer
 +
** Hardware [[division]] support
 +
** Hardware [[Fused Multiply-Accumulate]]
 +
* [[VFPv4]] (from [[VFPv3]])
 +
* [[NEONv2]] (from [[NEON]])
 +
* Memory subsystem
 +
** Level 1 [[instruction cache]] reduced to 2-way set associative (down from 4-way)
 +
** Added {{arm|LPAE}} support
 +
 
 +
{{expand list}}
 +
 
 
=== Block Diagram ===
 
=== Block Diagram ===
 
{{empty section}}
 
{{empty section}}
 
=== Memory Hierarchy ===
 
=== Memory Hierarchy ===
 
{{empty section}}
 
{{empty section}}
 +
 +
== Licensees ==
 +
Arm named the following companies as licensees.
 +
 +
{{collist
 +
|count = 3
 +
|
 +
* [[Broadcom]]
 +
* [[Freescale]]
 +
* [[Fujitsu]]
 +
* [[HiSilicon]]
 +
* [[LGE]]
 +
* [[Samsung]]
 +
* [[STEricsson]]
 +
* [[Texas Instruments]]
 +
}}
  
 
== Die ==
 
== Die ==
 
=== MediaTek [[MT6595]] ===
 
=== MediaTek [[MT6595]] ===
== Die ==
 
 
* TSMC [[28 nm process]]
 
* TSMC [[28 nm process]]
 
* 89 mm² die size
 
* 89 mm² die size
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(small quad-core is unlabeled below the big core cluster)
 
(small quad-core is unlabeled below the big core cluster)
 
:[[File:mt6595 die shot.png|600px]]
 
:[[File:mt6595 die shot.png|600px]]
 +
 +
== Bibliography ==
 +
* Mair, Hugh, et al. "23.3 A highly integrated smartphone SoC featuring a 2.5 GHz octa-core CPU with advanced high-performance and low-power techniques." Solid-State Circuits Conference-(ISSCC), 2015 IEEE International. IEEE, 2015.

Latest revision as of 14:24, 31 December 2018

Edit Values
Cortex-A7 µarch
General Info
Arch TypeCPU
DesignerARM Holdings
ManufacturerTSMC
IntroductionOctober 19, 2011
Process40 nm, 28 nm
Instructions
ISAARMv7
Succession

Cortex-A7 (codename Kingfisher) is the successor to the Cortex-A9, a high efficiency ARM microarchitecture designed by ARM Holdings for the mobile market. This microarchitecture is designed as a synthesizable IP core and is sold to other semiconductor companies to be implemented in their own chips. The Cortex-A7 was introduced along with the big.LITTLE technology so that it could be integrated along with the a higher-performance core such as the Cortex-A15 or the Cortex-A17 for better energy and power efficiency.

Architecture[edit]

Key changes from Cortex-A9[edit]

This list is incomplete; you can help by expanding it.

Block Diagram[edit]

New text document.svg This section is empty; you can help add the missing info by editing this page.

Memory Hierarchy[edit]

New text document.svg This section is empty; you can help add the missing info by editing this page.

Licensees[edit]

Arm named the following companies as licensees.

Die[edit]

MediaTek MT6595[edit]

  • TSMC 28 nm process
  • 89 mm² die size
  • Quad-core Cortex-A7
    • ~0.48 mm² per core
  • Quad-core Cortex-A17 + 2 MiB L2
    • ~1.93 mm² per core
    • ~3.93 mm² for 2 MiB L2

(small quad-core is unlabeled below the big core cluster)

mt6595 die shot.png

Bibliography[edit]

  • Mair, Hugh, et al. "23.3 A highly integrated smartphone SoC featuring a 2.5 GHz octa-core CPU with advanced high-performance and low-power techniques." Solid-State Circuits Conference-(ISSCC), 2015 IEEE International. IEEE, 2015.
codenameCortex-A7 +
designerARM Holdings +
first launchedOctober 19, 2011 +
full page namearm holdings/microarchitectures/cortex-a7 +
instance ofmicroarchitecture +
instruction set architectureARMv7 +
manufacturerTSMC +
microarchitecture typeCPU +
nameCortex-A7 +
process40 nm (0.04 μm, 4.0e-5 mm) + and 28 nm (0.028 μm, 2.8e-5 mm) +