Semiconductor & Computer Engineering
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== Overview == | == Overview == | ||
| − | NRAM uses [[carbon nanotubes]] (CTNs) as the switching medium situated between two electrodes located in the [[BEOL]]. It is [[resistance-change memory]] meaning an "off" state is a result of high [[resistance]] while an "on" state is a result of low resistance. The resistance of the [[bit cell]] is determined by the contact arrangement of the stochastic fabric of CNTs. When a sufficient amount of CNTs are touching each other, the overall resistance of the network of disordered CNTs is low, on the order of 100 kΩ. Likewise, when disconnected, the overall resistance of the network is very high, on the order of 1 MΩ. NRAM relies on the [[wikipedia:van der Waals force|van der Waals force]] to keep CNTs bound to each other. | + | NRAM uses [[carbon nanotubes]] (CTNs) as the switching medium situated between two electrodes located in the [[BEOL]]. The underlying device and substrate need not matter. It is [[resistance-change memory]] meaning an "off" state is a result of high [[resistance]] while an "on" state is a result of low resistance. The resistance of the [[bit cell]] is determined by the contact arrangement of the stochastic fabric of CNTs. When a sufficient amount of CNTs are touching each other, the overall resistance of the network of disordered CNTs is low, on the order of 100 kΩ. Likewise, when disconnected, the overall resistance of the network is very high, on the order of 1 MΩ. NRAM relies on the [[wikipedia:van der Waals force|van der Waals force]] to keep CNTs bound to each other as well as apart. |
== Bibliography == | == Bibliography == | ||
Revision as of 21:13, 16 September 2018
NRAM (Nano-RAM) is a carbon nanotube-based resistance-change storage-class random access memory. NRAM is proprietary technology developed by Nantero licenseable to manufacturers.
Overview
NRAM uses carbon nanotubes (CTNs) as the switching medium situated between two electrodes located in the BEOL. The underlying device and substrate need not matter. It is resistance-change memory meaning an "off" state is a result of high resistance while an "on" state is a result of low resistance. The resistance of the bit cell is determined by the contact arrangement of the stochastic fabric of CNTs. When a sufficient amount of CNTs are touching each other, the overall resistance of the network of disordered CNTs is low, on the order of 100 kΩ. Likewise, when disconnected, the overall resistance of the network is very high, on the order of 1 MΩ. NRAM relies on the van der Waals force to keep CNTs bound to each other as well as apart.
Bibliography
- Gervasi, Bill, Nantero Principal Systems Architect (September 14, 2018). Personal interview.
- IEEE Hot Chips 30 Symposium (HCS) 2018