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Difference between revisions of "90 nm lithography process"

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{{lithography processes}}
 
{{lithography processes}}
The '''90 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[110 nm lithography process|110 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 90 nm process began in 2004. This technology was superseded by the [[80 nm lithography process|80 nm process]] (HN) / [[65 nm lithography process|65 nm process]] (FN) in 2006.
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The '''90 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[110 nm lithography process|110 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 90 nm process began in 2003. This technology was superseded by the [[80 nm lithography process|80 nm process]] (HN) / [[65 nm lithography process|65 nm process]] (FN) in 2006.
  
 
== Industry ==
 
== Industry ==

Revision as of 18:27, 24 April 2016

The 90 nm lithography process is a full node semiconductor manufacturing process following the 110 nm process stopgap. Commercial integrated circuit manufacturing using 90 nm process began in 2003. This technology was superseded by the 80 nm process (HN) / 65 nm process (FN) in 2006.

Industry

Fab
Process Name​
1st Production​
Type​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel TSMC Samsung Fujitsu IBM / Toshiba / Sony / AMD / Chartered
P1262 CS-100 / CS-101
2002 2003 2003 2004 2003
Bulk PDSOI
Value 130 nm Δ Value 130 nm Δ Value 130 nm Δ Value 130 nm Δ Value 130 nm Δ
260 nm 0.82x 240 nm 0.77x 245 nm 0.70x  ? nm  ?x  ? nm  ?x
220 nm 0.63x 240 nm 0.71x 245 nm 0.70x  ? nm  ?x  ? nm  ?x
1.0 µm2 0.50x 0.999 µm2  ?x 0.999 µm2  ?x 1.07 µm2 0.54x 0.999 µm2  ?x

90 nm Microprocessors

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90 nm System on Chips

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90 nm Microarchitectures

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