From WikiChip
Editing 5 nm lithography process

Warning: You are not logged in. Your IP address will be publicly visible if you make any edits. If you log in or create an account, your edits will be attributed to your username, along with other benefits.

The edit can be undone. Please check the comparison below to verify that this is what you want to do, and then save the changes below to finish undoing the edit.

This page supports semantic in-text annotations (e.g. "[[Is specified as::World Heritage Site]]") to build structured and queryable content provided by Semantic MediaWiki. For a comprehensive description on how to use annotations or the #ask parser function, please have a look at the getting started, in-text annotation, or inline queries help pages.

Latest revision Your text
Line 151: Line 151:
  
 
==== 4LPE ====
 
==== 4LPE ====
The '''4-nanometer Low-Power Early''' ('''4LPE''') process is a continuation of Samsung's 7LPP and 5LPE, inheriting the transistor and most of the ground rules from 7LPP. This is Samsung's last [[FinFET]]-based process. 4LPE features similar pitches to 5LPE but introduces slightly tighter metal pitches.
+
The '''4-nanometer Low-Power Early''' ('''4LPE''') process is a continuation of Samsung's 7LPP and 5LPE, inheriting the transistor and most of the ground rules from 7LPP. This is Samsung's last [[FinFET]]-based process. 4LPE features similar pitches to 5LPE but introduces slightly tighter metal mitches.
  
 
{| class="wikitable collapsible collapsed"
 
{| class="wikitable collapsible collapsed"

Please note that all contributions to WikiChip may be edited, altered, or removed by other contributors. If you do not want your writing to be edited mercilessly, then do not submit it here.
You are also promising us that you wrote this yourself, or copied it from a public domain or similar free resource (see WikiChip:Copyrights for details). Do not submit copyrighted work without permission!

Cancel | Editing help (opens in new window)