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== Industry ==
 
== Industry ==
HP's ''NMOS II'' was a second generation nMOD process which was a shrink of their previous generation [[7 µm]] nMOS also developed by [[HP]]'s Loveland Division. The shrink was done in the hope they could double the speed while doubling density. Loveland went on on to create a third and final process, the ''NMOS III'' using a [[1.5 µm process]]. While they succeeded in doubling the density and more than ten-folding the speed, the complexity of the chip still required them to fabricate it on 3 separate dies and package them together. Intel introduced their {{intel|2116}} in 1976, the first 16 Kib DRAM which was also implemented using 5 micron design rules.
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HP's ''NMOS II'' process as the name implied was a second generation nMOD process which was a shrink of their previous generation [[7 µm]] nMOS also developed by [[HP]]'s Loveland Division. The shrink was done in the hope they could double the speed while doubling density. Loveland went on on to create a third and final process, the ''NMOS III'' using a [[1.5 µm process]]. While they succeeded in doubling the density and more than ten-folding the speed, the complexity of the chip still required them to fabricate it on 3 seperate dies and package them together.
 
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{{scrolling table/top|style=text-align: right; | first=Fab
{{#invoke:process nodes
+
  |Process Name
| compare
+
  |1st Production
| fab 1 name link  = intel
+
  |Contacted Gate Pitch
| fab 1 name        = Intel
+
  |Interconnect Pitch
| fab 1 proc name  =
+
  |Metal Layers
| fab 1 date        = 1976
+
  |Technology
| fab 1 wafer.type  = Bulk
+
  |Wafer
| fab 1 wafer.size  = 51 mm
 
| fab 1 xtor.tech  = nMOS
 
| fab 1 xtor.type  = Planar
 
| fab 1 xtor.volt  = 5 V
 
| fab 1 layers      = 1, 2
 
| fab 1 diff from  = [[8 µm]] Δ
 
| fab 1 xtor.lg    = 5 µm
 
| fab 1 xtor.lgΔ    = 0.63x
 
| fab 1 xtor.cpp    =  
 
  | fab 1 xtor.cppΔ  =
 
  | fab 1 xtor.mmp    =
 
| fab 1 xtor.mmpΔ  =
 
| fab 1 sram.hp    =
 
  | fab 1 sram.hpΔ    =
 
  | fab 1 sram.hd    = 435 µm²
 
  | fab 1 sram.hdΔ    = 0.34x
 
  | fab 1 sram.lv    =
 
  | fab 1 sram.lvΔ    =
 
| fab 1 dram.edram  =
 
| fab 1 dram.edramΔ =
 
 
 
| fab 2 name link  = hp
 
| fab 2 name        = HP
 
| fab 2 proc name  = NMOS II
 
| fab 2 date        = 1973
 
| fab 2 wafer.type  = Bulk
 
| fab 2 wafer.size  = 51 mm
 
| fab 2 xtor.tech  = nMOS
 
| fab 2 xtor.type  = Planar
 
| fab 2 xtor.volt  = 5 V
 
| fab 2 layers      =
 
| fab 2 diff from  = [[7 µm]] Δ
 
| fab 2 xtor.lg    = 5 µm
 
| fab 2 xtor.lgΔ    = 0.71x
 
| fab 2 xtor.cpp    =
 
| fab 2 xtor.cppΔ  =
 
| fab 2 xtor.mmp    =
 
| fab 2 xtor.mmpΔ  =
 
| fab 2 sram.hp    =
 
| fab 2 sram.hpΔ    =
 
| fab 2 sram.hd    =
 
| fab 2 sram.hdΔ    =
 
| fab 2 sram.lv    =
 
| fab 2 sram.lvΔ    =
 
| fab 2 dram.edram  =
 
| fab 2 dram.edramΔ =
 
 
}}
 
}}
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{{scrolling table/mid}}
 +
|-
 +
! [[HP]]
 +
|- style="text-align: center;"
 +
| NMOS II
 +
|- style="text-align: center;"
 +
| 1973
 +
|-
 +
| ? nm
 +
|-
 +
| ? nm
 +
|-
 +
|  
 +
|-
 +
| nMOS
 +
|-
 +
|  51 mm
 +
{{scrolling table/end}}
  
 
== 5µm Microprocessors ==
 
== 5µm Microprocessors ==

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