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45 nm lithography process
Revision as of 20:35, 23 April 2016 by David (talk | contribs) (Intel)

The 45 nm lithography process is a full node semiconductor manufacturing process following the 55 nm process stopgap. Commercial integrated circuit manufacturing using 45 nm process began in 2007. This technology was superseded by the 40 nm process (HN) / 32 nm process (FN) in 2010.

Industry

Intel

Measurement Scaling from 65 nm
Contacted Gate Pitch 180 nm 0.82x
Interconnect Pitch (M1P) 160 nm 0.76x
SRAM bit cell 0.346 µm2 0.61x
Design Rules
Layer Pitch Thick Aspect Ratio
Isolation 200 nm 200 nm -
Contacted Gate 180 nm 60 nm --
Metal 1 160 nm 144 nm 1.8
Metal 2 160 nm 144 nm 1.8
Metal 3 160 nm 144 nm 1.8
Metal 4 240 nm 216 nm 1.8
Metal 5 280 nm 252 nm 1.8
Metal 6 360 nm 324 nm 1.8
Metal 7 560 nm 504 nm 1.7
Metal 8 810 nm 720 nm 1.8
Metal 9 30.5 µm 7 µm 1.5

45 nm Microprocessors

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45 nm System on Chips

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45 nm Microarchitectures

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