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Difference between revisions of "3 nm lithography process"

m (David moved page 3.5 nm lithography process to 3 nm lithography process: Looks like Intel decided to call it "3")
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{{lithography processes}}
 
{{lithography processes}}
 
The '''3.5 nanometer (3.5 nm)''' or '''35 Å lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[5 nm lithography process|5 nm process]] node. Commercial [[integrated circuit]] manufacturing using 3.5 nm process is set to begin sometimes around 2024 or 2025. The term "3.5 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to [[technology node|gate length or half pitch]].
 
The '''3.5 nanometer (3.5 nm)''' or '''35 Å lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[5 nm lithography process|5 nm process]] node. Commercial [[integrated circuit]] manufacturing using 3.5 nm process is set to begin sometimes around 2024 or 2025. The term "3.5 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to [[technology node|gate length or half pitch]].
 +
  
 
== Industry ==
 
== Industry ==
−
{{empty section}}
+
 
 +
{{future information}}
 +
 
 +
{{finfet nodes comp
 +
<!-- Intel -->
 +
| process 1 fab          = [[Intel]]
 +
| process 1 name        = P1280? (CPU), P1281? (SoC)
 +
| process 1 date        = &nbsp;
 +
| process 1 lith        = EUV
 +
| process 1 immersion    = &nbsp;
 +
| process 1 exposure    = SE
 +
| process 1 wafer type  = Bulk
 +
| process 1 wafer size  = 300 nm
 +
| process 1 transistor  = &nbsp;
 +
| process 1 volt        = &nbsp;
 +
| process 1 delta from  = [[5 nm]] Δ
 +
| process 1 fin pitch    = &nbsp;
 +
| process 1 fin pitch Δ  = &nbsp;
 +
| process 1 fin width    = &nbsp;
 +
| process 1 fin width Δ  = &nbsp;
 +
| process 1 fin height  = &nbsp;
 +
| process 1 fin height Δ = &nbsp;
 +
| process 1 gate len    = &nbsp;
 +
| process 1 gate len Δ  = &nbsp;
 +
| process 1 cpp          = &nbsp;
 +
| process 1 cpp Δ        = &nbsp;
 +
| process 1 mmp          = &nbsp;
 +
| process 1 mmp Δ        = &nbsp;
 +
| process 1 sram hp      = &nbsp;
 +
| process 1 sram hp Δ    = &nbsp;
 +
| process 1 sram hd      = &nbsp;
 +
| process 1 sram hd Δ    = &nbsp;
 +
| process 1 sram lv      = &nbsp;
 +
| process 1 sram lv Δ    = &nbsp;
 +
| process 1 dram        = &nbsp;
 +
| process 1 dram Δ      = &nbsp;
 +
<!-- TSMC -->
 +
| process 2 fab          = [[TSMC]]
 +
| process 2 name        = &nbsp;
 +
| process 2 date        = &nbsp;
 +
| process 2 lith        = EUV
 +
| process 2 immersion    = &nbsp;
 +
| process 2 exposure    = SE
 +
| process 2 wafer type  = Bulk
 +
| process 2 wafer size  = 300 nm
 +
| process 2 transistor  = &nbsp;
 +
| process 2 volt        = &nbsp;
 +
| process 2 delta from  = [[5 nm]] Δ
 +
| process 2 fin pitch    = &nbsp;
 +
| process 2 fin pitch Δ  = &nbsp;
 +
| process 2 fin width    = &nbsp;
 +
| process 2 fin width Δ  = &nbsp;
 +
| process 2 fin height  = &nbsp;
 +
| process 2 fin height Δ = &nbsp;
 +
| process 2 gate len    = &nbsp;
 +
| process 2 gate len Δ  = &nbsp;
 +
| process 2 cpp          = &nbsp;
 +
| process 2 cpp Δ        = &nbsp;
 +
| process 2 mmp          = &nbsp;
 +
| process 2 mmp Δ        = &nbsp;
 +
| process 2 sram hp      = &nbsp;
 +
| process 2 sram hp Δ    = &nbsp;
 +
| process 2 sram hd      = &nbsp;
 +
| process 2 sram hd Δ    = &nbsp;
 +
| process 2 sram lv      = &nbsp;
 +
| process 2 sram lv Δ    = &nbsp;
 +
| process 2 dram        = &nbsp;
 +
| process 2 dram Δ      = &nbsp;
 +
<!-- GlobalFoundries -->
 +
| process 3 fab          = [[GlobalFoundries]]
 +
| process 3 name        = &nbsp;
 +
| process 3 date        = &nbsp;
 +
| process 3 lith        = EUV
 +
| process 3 immersion    = &nbsp;
 +
| process 3 exposure    = SE
 +
| process 3 wafer type  = Bulk
 +
| process 3 wafer size  = 300 nm
 +
| process 3 transistor  = &nbsp;
 +
| process 3 volt        = &nbsp;
 +
| process 3 delta from  = [[5 nm]] Δ
 +
| process 3 fin pitch    = &nbsp;
 +
| process 3 fin pitch Δ  = &nbsp;
 +
| process 3 fin width    = &nbsp;
 +
| process 3 fin width Δ  = &nbsp;
 +
| process 3 fin height  = &nbsp;
 +
| process 3 fin height Δ = &nbsp;
 +
| process 3 gate len    = &nbsp;
 +
| process 3 gate len Δ  = &nbsp;
 +
| process 3 cpp          = &nbsp;
 +
| process 3 cpp Δ        = &nbsp;
 +
| process 3 mmp          = &nbsp;
 +
| process 3 mmp Δ        = &nbsp;
 +
| process 3 sram hp      = &nbsp;
 +
| process 3 sram hp Δ    = &nbsp;
 +
| process 3 sram hd      = &nbsp;
 +
| process 3 sram hd Δ    = &nbsp;
 +
| process 3 sram lv      = &nbsp;
 +
| process 3 sram lv Δ    = &nbsp;
 +
| process 3 dram        = &nbsp;
 +
| process 3 dram Δ      = &nbsp;
 +
<!-- Samsung -->
 +
| process 4 fab          = [[Samsung]]
 +
| process 4 name        = &nbsp;
 +
| process 4 date        = &nbsp;
 +
| process 4 lith        = EUV
 +
| process 4 immersion    = &nbsp;
 +
| process 4 exposure    = SE
 +
| process 4 wafer type  = Bulk
 +
| process 4 wafer size  = 300 nm
 +
| process 4 transistor  = GAA
 +
| process 4 volt        = &nbsp;
 +
| process 4 delta from  = [[5 nm]] Δ
 +
| process 4 fin pitch    = -
 +
| process 4 fin pitch Δ  =
 +
| process 4 fin width    =
 +
| process 4 fin width Δ  =
 +
| process 4 fin height  =
 +
| process 4 fin height Δ =
 +
| process 4 gate len    = &nbsp;
 +
| process 4 gate len Δ  = &nbsp;
 +
| process 4 cpp          = &nbsp;
 +
| process 4 cpp Δ        = &nbsp;
 +
| process 4 mmp          = &nbsp;
 +
| process 4 mmp Δ        = &nbsp;
 +
| process 4 sram hp      = &nbsp;
 +
| process 4 sram hp Δ    = &nbsp;
 +
| process 4 sram hd      = &nbsp;
 +
| process 4 sram hd Δ    = &nbsp;
 +
| process 4 sram lv      = &nbsp;
 +
| process 4 sram lv Δ    = &nbsp;
 +
| process 4 dram        = &nbsp;
 +
| process 4 dram Δ      = &nbsp;
 +
}}
  
 
== 3.5 nm Microprocessors==
 
== 3.5 nm Microprocessors==
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== 3.5 nm Microarchitectures==
 
== 3.5 nm Microarchitectures==
 
{{expand list}}
 
{{expand list}}
 +
 +
== References ==
 +
* Kinam Kim, President of Semiconductor Business, announced MBCFET for the node after [[5 nm]], May 24, 2017
  
 
[[Category:Lithography]]
 
[[Category:Lithography]]

Revision as of 14:53, 1 June 2017

basic wafer drawing.svg Semiconductor lithography processes technology
v · d · e

The 3.5 nanometer (3.5 nm) or 35 Å lithography process is a full node semiconductor manufacturing process following the 5 nm process node. Commercial integrated circuit manufacturing using 3.5 nm process is set to begin sometimes around 2024 or 2025. The term "3.5 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch.


Industry

Symbol version future.svg Preliminary Data! Information presented in this article deal with future products, data, features, and specifications that have yet to be finalized, announced, or released. Information may be incomplete and can change by final release.


 
Process Name
1st Production
Lithography Lithography
Immersion
Exposure
Wafer Type
Size
Transistor Type
Voltage
 
Fin Pitch
Width
Height
Gate Length (Lg)
Contacted Gate Pitch (CPP)
Minimum Metal Pitch (MMP)
SRAM bitcell High-Perf (HP)
High-Density (HD)
Low-Voltage (LV)
DRAM bitcell eDRAM
Intel TSMC GlobalFoundries Samsung
P1280? (CPU), P1281? (SoC)      
       
EUV EUV EUV EUV
       
SE SE SE SE
Bulk Bulk Bulk Bulk
300 nm 300 nm 300 nm 300 nm
      GAA
       
Value 5 nm Δ Value 5 nm Δ Value 5 nm Δ Value 5 nm Δ
            N/A
           
           
               
               
               
               
               
               
               

3.5 nm Microprocessors

This list is incomplete; you can help by expanding it.

3.5 nm Microarchitectures

This list is incomplete; you can help by expanding it.

References

  • Kinam Kim, President of Semiconductor Business, announced MBCFET for the node after 5 nm, May 24, 2017
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