Semiconductor & Computer Engineering
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Difference between revisions of "350 nm lithography process"
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| − | The '''350 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[500 nm lithography process|500 nm process]] node. Commercial [[integrated circuit]] manufacturing using 350 nm process began in late 1995. 350 nm was phased out and replaced by [[250 nm]] in | + | The '''350 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[500 nm lithography process|500 nm process]] node. Commercial [[integrated circuit]] manufacturing using 350 nm process began in late 1995. 350 nm was phased out and replaced by [[250 nm]] in 1999. |
| + | |||
| + | == Industry == | ||
| + | {{scrolling table/top|style=text-align: right; | first=Fab | ||
| + | |Type | ||
| + | |Contacted Gate Pitch | ||
| + | |Interconnect Pitch (M1P) | ||
| + | |SRAM bit cell | ||
| + | }} | ||
| + | {{scrolling table/mid}} | ||
| + | |- | ||
| + | ! colspan="2" | [[Intel]] | ||
| + | |- | ||
| + | ! Value | ||
| + | |- | ||
| + | | ? nm | ||
| + | |- | ||
| + | | 880 nm | ||
| + | |- | ||
| + | | 18.1 µm<sup>2</sup> | ||
| + | {{scrolling table/end}} | ||
| + | === Design Rules === | ||
| + | {| class="wikitable collapsible collapsed" | ||
| + | |- | ||
| + | ! colspan="3" | Intel 0.350 micron Design Rules | ||
| + | |- | ||
| + | ! Layer !! Pitch !! Thick | ||
| + | |- | ||
| + | | Isolation || ? nm || ? nm | ||
| + | |- | ||
| + | | Polysilicon || ? nm || ? nm | ||
| + | |- | ||
| + | | Metal 1 || 880 nm || 600 nm | ||
| + | |- | ||
| + | | Metal 2 || 1.16 µm || 800 nm | ||
| + | |- | ||
| + | | Metal 3 || 1.16 µm || 800 nm | ||
| + | |- | ||
| + | | Metal 4 || 1.70 µm || 1.70 µm | ||
| + | |} | ||
| + | |||
| + | == 350 nm Microprocessors== | ||
| + | {{expand list}} | ||
| + | |||
| + | == 350 nm Microarchitectures == | ||
| + | {{expand list}} | ||
Revision as of 10:03, 24 April 2016
Semiconductor lithography processes technology
The 350 nm lithography process is a full node semiconductor manufacturing process following the 500 nm process node. Commercial integrated circuit manufacturing using 350 nm process began in late 1995. 350 nm was phased out and replaced by 250 nm in 1999.
Industry
| Fab |
|---|
| Type |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell |
| Intel | |
|---|---|
| Value | |
| ? nm | |
| 880 nm | |
| 18.1 µm2 | |
Design Rules
| Intel 0.350 micron Design Rules | ||
|---|---|---|
| Layer | Pitch | Thick |
| Isolation | ? nm | ? nm |
| Polysilicon | ? nm | ? nm |
| Metal 1 | 880 nm | 600 nm |
| Metal 2 | 1.16 µm | 800 nm |
| Metal 3 | 1.16 µm | 800 nm |
| Metal 4 | 1.70 µm | 1.70 µm |
350 nm Microprocessors
This list is incomplete; you can help by expanding it.
350 nm Microarchitectures
This list is incomplete; you can help by expanding it.
