The 2 µm lithography process was the semiconductor process technology used by the some semiconductor companies in the mid to late 1980s. By the mid 80s this process was replaced by 1.5 µm, 1.3 µm, and 1.2 µm processes.

Industry

Foundry
Process Name
1st Production
Wafer	Type
	Size
Transistor	Technology
	Type
	Voltage
Metal Layers
Gate Length (Lg)
Contacted Gate Pitch (CPP)
Minimum Metal Pitch (MMP)
SRAM bitcell	High-Perf (HP)
	High-Density (HD)
	Low-Voltage (LV)
DRAM bitcell	eDRAM

Intel		Intel		Intel		AMD		Motorola		STMicro		Toshiba		TI		Hitachi
CHMOS II		P414.1 (HMOS-II)		P421.X (HMOS-E)												Hi-CMOS II
1979		1980		1980						1992						1982
Bulk		Bulk		Bulk		Bulk		Bulk				Bulk		Bulk		Bulk
CMOS				pMOS
Planar		Planar		Planar
5 V		5 V		5 V												5 V
1
Value	3 µm Δ	Value		Value	N/A	Value	N/A	Value	N/A	Value	N/A	Value	N/A	Value	N/A	Value	3 µm
2 µm	0.80x															2 µm	0.67x
5.6 µm
8 µm																3 µm	1.00x
1740 µm²																303.8 µm²	0.34x

Microprocessors

• Motorola
  • 68020
• MIPS
  • R2000
• DEC
  • CVAX
• TI
  • SBR9000
• AMD
  • Am29100
  • Am29500

This list is incomplete; you can help by expanding it.

References

• Minato, O., et al. "A Hi-CMOSII 8Kx8 bit static RAM." IEEE Journal of Solid-State Circuits 17.5 (1982): 793-798.
• Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.