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Difference between revisions of "28 nm lithography process"

(Industry)
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* Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012.
 
* Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012.
 
* James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014.
 
* James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014.
 +
* [[:File:samsung foundry solution 28-32nm.pdf|Samsung foundry solution for 32 & 28 nm]]

Revision as of 19:21, 28 March 2017

The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.

Industry

Fab
Process Name​
Transistor​
Wafer​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell (HD)​
SRAM bit cell (LP)​
SRAM bit cell (HC)
Samsung TSMC GlobalFoundries STMicroelectronics UMC
28LP/28LPP   28SLP    
Planar
300 mm
Value 40 nm Δ Value 40 nm Δ Value 40 nm Δ Value 40 nm Δ Value 40 nm Δ
113.4 nm 0.88x 117 nm 0.72x 113.4 nm  ?x  ?nm  ?x  ?nm  ?x
90 nm 0.76x 95 nm 0.81x 90 nm  ?x  ?nm  ?x  ?nm  ?x
0.120 µm²  ?x 0.127 µm² 0.52x 0.120 µm²  ?x 0.120 µm²  ?x 0.124 µm²  ?x
0.155 µm² 0.197 µm²  ?x  ? µm²  ?x
0.152 µm²  ?x

28 nm Microprocessors

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28 nm Microarchitectures

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References

  • Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012.
  • James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014.
  • Samsung foundry solution for 32 & 28 nm